IPB100N12S305ATMA2 vs IPC100N04S5L1R5ATMA1 Perbandingan

Perbandingan bersamaan detil IPB100N12S305ATMA2 dari Infineon dan IPC100N04S5L1R5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPC100N04S5L1R5ATMA1 IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPB100N12S305ATMA2 IPC100N04S5L1R5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 120V —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 120 V —
Continuous Drain Current (ID) at Tc 100 A —
Power Dissipation (PD) at Tc 300 W —
Drain-Source On-Resistance RDS(on) 0.0048 ohm (4.8 mΩ) at VGS=10 V —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th) typ]
Maximum Junction Temperature 175 °C —
Avalanche Energy (EAS) 1445 mJ —
Paket / Case PG-TO263-3-2 (D2PAK) —
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 °C to +175 °C (TJ) -55C to +175C
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant Compliant (Green Product)
Level MSL [DATA_NEEDED: MSL rating] MSL1 (260C peak reflow)
Product Family — OptiMOS-5 40 V
Polarity / Channel Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) Max — 40 V
Gate-Source Voltage (VGS) Max — 20 V
Continuous Drain Current (ID) at Tc=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Power Dissipation (PD) at Tc=25C — 115 W
On-Resistance RDS(on) at VGS=10 V — 1.5 mOhm (typ)
On-Resistance RDS(on) at VGS=4.5 V — 1.8 mOhm (typ)
Paket — PG-TDSON-8-34 (SS08 leadless)
AEC-Q101 Qualified — Yes
Avalanche Tested — 100%

Spek dan Sumber

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