IPB110P06LMATMA1 vs IPB073N15N5ATMA1 Comparison
Detailed side-by-side comparison of IPB110P06LMATMA1 by Infineon and IPB073N15N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB073N15N5ATMA1 - 150V 114A 7.3mΞ© OptiMOS 5 N-MOSFET | Infineon
IPB073N15N5ATMA1 β ActiveSpecification Comparison
| Parameter | IPB110P06LMATMA1 | IPB073N15N5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.31 | $1.82 |
| FET Type | P-Channel | β |
| Technology | OptiMOS (trench MOSFET) | OptiMOS 5 (superjunction trench) |
| Drain-Source Voltage (VDS) | -60 V | 150 V |
| Continuous Drain Current (ID) at TC=25C | -100 A | β |
| Maximum Power Dissipation (PD) at TC=25C | 300 W | β |
| On-State Resistance (RDS(on) max) at VGS=10V | 11 mOhm @ ID=100A | β |
| Gate Threshold Voltage (VGS(th) max) | 2 V @ ID=5.55 mA | β |
| Gate-Source Voltage (VGS max) | +/-20 V | β |
| Operating Temperature Range | -55 C to +175 C (TJ) | -55Β°C to +175Β°C (junction) |
| Package / Case | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) | β |
| Mounting Type | Surface Mount | Surface Mount (SMD) |
| Supplier Device Package | PG-TO263-3-2 | β |
| Gate Drive Level | Logic-level compatible | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25Β°C | β | 114 A |
| On-Resistance RDS(on) max at VGS=10V | β | 7.3 mΞ© |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Power Dissition (PD) at Tc=25Β°C | β | 214 W |
| Package | β | PG-TO263-3-2 (D2PAK-3L, surface mount) |
| Packaging | β | Tape and Reel (suffix ATMA1) |
| Configuration | β | Single N-channel, 3 pins (Gate, Drain, Source) |
| MSL (Moisture Sensitivity Level) | β | [DATA_NEEDED: MSL level] |