IPB110P06LMATMA1 vs IPB073N15N5ATMA1 比較
詳細並排比較 IPB110P06LMATMA1 由 Infineon 與 IPB073N15N5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPB110P06LMATMA1 | IPB073N15N5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | P-Channel | — |
| Technology | OptiMOS (trench MOSFET) | OptiMOS 5 (superjunction trench) |
| Drain-Source Voltage (VDS) | -60 V | 150 V |
| Continuous Drain Current (ID) at TC=25C | -100 A | — |
| Maximum Power Dissipation (PD) at TC=25C | 300 W | — |
| On-State Resistance (RDS(on) max) at VGS=10V | 11 mOhm @ ID=100A | — |
| Gate Threshold Voltage (VGS(th) max) | 2 V @ ID=5.55 mA | — |
| Gate-Source Voltage (VGS max) | +/-20 V | — |
| 工作溫度範圍 | -55 C to +175 C (TJ) | -55°C to +175°C (junction) |
| 封裝 / 外殼 | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) | — |
| 安裝類型 | Surface Mount | Surface Mount (SMD) |
| Supplier Device Package | PG-TO263-3-2 | — |
| Gate Drive Level | Logic-level compatible | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| 電晶體類型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25°C | — | 114 A |
| On-Resistance RDS(on) max at VGS=10V | — | 7.3 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Power Dissition (PD) at Tc=25°C | — | 214 W |
| 封裝 | — | PG-TO263-3-2 (D2PAK-3L, surface mount) |
| Packaging | — | Tape and Reel (suffix ATMA1) |
| Configuration | — | Single N-channel, 3 pins (Gate, Drain, Source) |
| MSL (Moisture Sensitivity Level) | — | [DATA_NEEDED: MSL level] |