IPB073N15N5ATMA1 - 150V 114A 7.3mΩ OptiMOS 5 N-MOSFET | Infineon
MPN: IPB073N15N5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.42 | $34.20 |
| 100 | $2.98 | $298.00 |
| 500 | $2.55 | $1,275.00 |
| 1,000 | $2.18 | $2,180.00 |
| 3,000 | $1.82 | $5,460.00 |
IPB073N15N5ATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device that conducts current between drain and source when a sufficient gate-source voltage is applied. It belongs to the hypernym hierarchy MOSFET -> FET -> discrete semiconductor -> power semiconductor. N-channel enhancement-mode MOSFETs like the IPB073N15N5 are the workhorse switches of high-current DC-DC conversion, motor drive, and synchronous rectification because their low on-resistance and fast switching enable efficient power transfer with minimal conduction and switching loss.
Key features of this part include an industry-leading 7.3 mΩ maximum on-resistance at VGS=10 V, gate charge (Qg) optimized for hard-switching topologies, a logic-level capable gate threshold range, and a 150 V drain-source breakdown that comfortably covers 48 V telecom, solar, and e-mobility bus rails. The D2PAK package provides a creepage distance and thermal pad suitable for high-current surface-mount assembly with PCB copper heatsinking.
OptiMOS 5 technology uses Infineon's latest superjunction (SJ) trench architecture, balancing low RDS(on) per die area, low gate charge, and low output capacitance (Coss) to deliver a Figure-of-Merit (FOM = RDS(on) × Qg) that significantly improves over prior OptiMOS generations. This yields reduced driver losses, cooler operation at given load, and higher frequency capability for compact magnetics designs.
Typical applications include 48 V telecom and solar converters, low-voltage motor drives such as forklifts and e-scooters, synchronous rectification in server and telecom DC-DC bricks, hot-swap and OR-ing controllers, and industrial UPS systems. The wide 150 V rating also makes it suitable for 100 V PoE and battery management applications.
When designing with this MOSFET, ensure the gate driver can source/sink sufficient peak current for fast switching without exceeding the VGS(max) of ±20 V. PCB layout must minimize the power-loop and gate-loop inductance to control voltage overshoot and EMI; the D2PAK tab should be soldered to a copper pour sized for the application dissipation.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for IPB073N15N5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPB073N15N5ATMA1 (same form factor and footprint) — differing in Mounting Type, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Package.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPB068N15N5
✅ Drop-In📋 Reference alternative (not in catalog)
IPB107N15N5
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPP075N15N3GXKSA1
✅ Drop-In✓ In Stock
$1.92 / Unit
View Datasheet →IPB110P06LMATMA1
✅ Drop-In✓ In Stock
$1.31 / Unit
View Datasheet →IPB073N15N5ATMA1 Maximum Ratings & Electrical Characteristics
| Technology | OptiMOS 5 (superjunction trench) |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at Tc=25°C | 114 A |
| On-Resistance RDS(on) max at VGS=10V | 7.3 mΩ |
| Gate-Source Voltage (VGS) max | ±20 V |
| Power Dissition (PD) at Tc=25°C | 214 W |
| Package | PG-TO263-3-2 (D2PAK-3L, surface mount) |
| Mounting Type | Surface Mount (SMD) |
| Packaging | Tape and Reel (suffix ATMA1) |
| Operating Temperature Range | -55°C to +175°C (junction) |
| Configuration | Single N-channel, 3 pins (Gate, Drain, Source) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
IPB073N15N5ATMA1 Pin Configuration
| Pin 1 | GATE — Gate drive input (VGS) |
| Pin 2 | DRAIN — Drain connection (also tab) |
| Pin 3 | SOURCE — Source connection |
Safe Operating Area - DC Continuous
Typical Applications
IPB073N15N5ATMA1 is suitable for 6 applications: 48V Telecom and Solar Power Converters, Forklift and E-Scooter Motor Drives, Synchronous Rectification in Server and Telecom DC-DC, Hot-Swap and OR-ing Controllers, Industrial UPS and Battery Backup Systems, Solar Microinverters and String Inverters.
48V Telecom and Solar Power Converters
The IPB073N15N5ATMA1 is purpose-built by Infineon for 48V telecom and solar DC-DC converters where the 150V VDS rating covers 48V nominal buses with 100V transient margin. The 7.3 mΩ maximum RDS(on) at VGS=10V minimizes conduction loss in the synchronous rectification stage, while OptiMOS 5's low Qg reduces driver loss at switching frequencies above 50 kHz. Placed on a 1 oz copper 1 sq-in PCB pad, the part handles sustained 30–50A current at 48V input without heatsinking. Compared to older OptiMOS 3 parts, this 5th-generation device cuts switching loss by ~30%, allowing higher frequency and smaller magnetics in telecom brick converters and solar microinverters.
Recommended
Forklift and E-Scooter Motor Drives
Infineon markets the IPB073N15N5ATMA1 specifically for low-voltage motor drives such as forklift traction inverters and e-scooter controllers, where the 150V VDS comfortably covers 48–72V battery packs. The 114A continuous drain current rating supports motors up to ~5 kW without paralleling devices, and the low RDS(on) reduces I²R heating during high-torque low-RPM operation where PWM duty cycle is high. The D2PAK package allows PCB-side cooling via copper pour, simplifying mechanical integration versus TO-247 through-hole designs. In 3-phase bridge configurations, three pairs of these MOSFETs deliver smooth sinusoidal current with low switching loss, extending battery range per charge.
Recommended
Synchronous Rectification in Server and Telecom DC-DC
In 48V-to-12V or 48V-to-5V isolated DC-DC bricks, the IPB073N15N5ATMA1 serves as the synchronous rectifier MOSFET on the secondary side, replacing lossy Schottky diodes. Its 7.3 mΩ RDS(on) and 150V rating make it ideal for >100W output stages, while low reverse-recovery charge (Qrr) keeps dead-time loss minimal at high switching frequencies. The D2PAK tab provides sufficient thermal mass for sustained rectification duty, and the surface-mount design supports automated high-volume assembly required for server power-supply units. Used in this role, the part typically halves the rectification loss versus Schottky diodes, increasing overall brick efficiency by 1–2%.
Recommended
Hot-Swap and OR-ing Controllers
Hot-swap and OR-ing applications in telecom equipment require a MOSFET that can handle inrush current and continuous load while blocking the full bus voltage. The IPB073N15N5ATMA1's 150V VDS rating suits 48V systems with transient headroom, and its 7.3 mΩ RDS(on) keeps voltage drop across the OR-ing FET below 100mV at 14A load, minimizing power dissipation. The 114A continuous rating provides wide safety margin for transient inrush events. The D2PAK package allows compact PCB layouts in high-density backplane designs, and OptiMOS 5's linear-mode safe operating area (SOA) supports transient current surges during load-step events.
Recommended
Industrial UPS and Battery Backup Systems
Uninterruptible power supplies (UPS) and battery backup systems for industrial applications use the IPB073N15N5ATMA1 as the main disconnect and battery-charge path MOSFET. The 150V rating handles 96V battery strings with margin, and the 7.3 mΩ RDS(on) limits conduction loss during continuous high-current charging/discharging. The D2PAK package supports both PCB-side cooling and optional clip-on heatsink attachment. In bidirectional inverter/charger topologies, the part's low reverse-recovery loss improves system efficiency at the typical 20–50 kHz switching frequency of modern UPS designs, extending battery runtime during grid outages.
Recommended
Solar Microinverters and String Inverters
String inverters and microinverters in residential and commercial solar installations use the IPB073N15N5ATMA1 in the boost PFC stage and the DC-AC inverter bridge. Its 150V VDS rating supports 80–100V PV string voltages with margin, and its 7.3 mΩ RDS(on) maximizes conversion efficiency at partial load—the typical operating condition for solar systems. OptiMOS 5's low output capacitance (Coss) reduces switching loss at 50–100 kHz, allowing higher power density than older MOSFET generations. The D2PAK package withstands the elevated ambient temperatures of outdoor inverter enclosures, and the surface-mount design supports automated assembly for high-volume solar deployments.
Recommended
Recommended Products Summary
Engineering reference data for IPB073N15N5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB068N15N5 | IPB107N15N5 | IPP075N15N3GXKSA1 | IPB110P06LMATMA1 | BSC076N04NDATMA1 | ISC045N03L5SATMA1 | IRFB3207ZPBF |
|---|---|---|---|---|---|---|---|---|
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO220-3 (through-hole) | PG-TO263-3-2 (D2PAK) - same | PG-TDSON-8 (DFN) | PG-TDSON-8 (DFN) | TO-220AB (through-hole) |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| VDS (Drain-Source Voltage) | 150 V | 150 V (same) | 150 V (same) | 150 V (same) | 60 V (different) | 40 V (different) | 30 V (different) | 75 V (different) |
| RDS(on) max at VGS=10V | 7.3 mΩ | 6.8 mΩ (-7%) | 10.7 mΩ (+47%) | 7.5 mΩ (+3%) | 11 mΩ (+51%) | 7.6 mΩ (+4%) | 4.5 mΩ (-38%) | 4.5 mΩ (-38%) |
| Continuous Drain Current (Tc=25°C) | 114 A | 120 A (+5%) | 100 A (-12%) | 100 A (-12%) | 100 A (-12%) | 85 A (-25%) | 100 A (-12%) | 120 A (+5%) |
| Technology | OptiMOS 5 (SJ trench) | OptiMOS 5 (same) | OptiMOS 5 (same) | OptiMOS 3 (older) | OptiMOS P2 (P-channel) | OptiMOS 5 (same) | OptiMOS 5 (same) | StrongIRFET (older) |
| Polarity | N-Channel | N-Channel (same) | N-Channel (same) | N-Channel (same) | P-Channel (different) | N-Channel (same) | N-Channel (same) | N-Channel (same) |
| Power Dissipation (Tc=25°C) | 214 W | 214 W (same) | 214 W (same) | 300 W (TO-220 higher) | 150 W (different) | 83 W (DFN lower) | 139 W (different) | 300 W (TO-220 higher) |
| Qty-1 Price (USD, as of 2026-09-15) | $3.85 | $4.50 (+17%) | $2.90 (-25%) | $3.20 (-17%) | $3.10 (-19%) | $2.50 (-35%) | $2.20 (-43%) | $2.80 (-27%) |
Key Differentiators
- Industry-leading RDS(on) for 150V D2PAK MOSFETs (vs IPB107N15N5)
- Surface-mount D2PAK vs through-hole TO-220 (vs IPP075N15N3GXKSA1)
- OptiMOS 5 latest-generation technology (vs IPP075N15N3GXKSA1)
Design Notes
At sustained 100W dissipation on the D2PAK package, the tab temperature (Tc) must stay below 100°C to maintain reliability margin against the 175°C maximum junction rating. Using RθJC = 0.7 °C/W (typical for D2PAK), the junction-to-case temperature rise is 100W × 0.7 = 70°C, meaning a heatsink or substantial copper pour is required. PCB layout should dedicate at least 1 sq-in of 2 oz copper to the drain tab thermal pad; multiple thermal vias to internal copper planes further reduce RθJA. Estimated values - verify with the Infineon OptiMOS 5 thermal impedance curves for the specific application profile.
Minimize the high-current power loop inductance between drain and source to limit voltage overshoot during turn-off. Keep the gate-loop (gate-driver to gate-to-source) area small by placing the driver IC physically close to the gate pin and using a kelvin source connection where available. Use a gate-drive resistor (typically 4.7–22 Ω) to control switching speed and damp ringing; too low a value causes excessive ringing and EMI, too high increases switching loss. The Infineon OptiMOS 5 application note provides reference layouts for half-bridge and synchronous rectifier configurations.
Do not exceed VGS(max) of ±20V; use a gate-driver IC with regulated 10–12V supply rather than direct MCU GPIO drive. Verify dynamic RDS(on) at the operating junction temperature, not just the 25°C datasheet figure - RDS(on) typically increases 30–50% at Tj=125°C. For avalanche-rated applications, confirm the part's single-pulse avalanche energy (EAS) rating in the datasheet and provide adequate VDS clamping. Avoid operating continuously in the linear region between cutoff and saturation, as this stresses the die beyond SOA ratings.
Compliance Information
RoHS and REACH compliant per Infineon product page and DigiKey material declarations. AEC-Q101 automotive grade is not specified for IPB073N15N5ATMA1; for automotive applications choose Infineon's IAUC/IGLR automotive-qualified variants. Lead-free matte-tin plating. Halogen-free status not explicitly stated in provided data.
