IPB110P06LMATMA1 vs IPB073N15N5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPB110P06LMATMA1 sa pamamagitan ng Infineon at IPB073N15N5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPB110P06LMATMA1 IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPB110P06LMATMA1 IPB073N15N5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type P-Channel —
Technology OptiMOS (trench MOSFET) OptiMOS 5 (superjunction trench)
Drain-Source Voltage (VDS) -60 V 150 V
Continuous Drain Current (ID) at TC=25C -100 A —
Maximum Power Dissipation (PD) at TC=25C 300 W —
On-State Resistance (RDS(on) max) at VGS=10V 11 mOhm @ ID=100A —
Gate Threshold Voltage (VGS(th) max) 2 V @ ID=5.55 mA —
Gate-Source Voltage (VGS max) +/-20 V —
Hanay ng Temperature na Operasyon -55 C to +175 C (TJ) -55°C to +175°C (junction)
Packhaging / Kaso PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) —
Uri ng Pagpapasok Surface Mount Surface Mount (SMD)
Supplier Device Package PG-TO263-3-2 —
Gate Drive Level Logic-level compatible —
Tindminan RoHS Compliant Compliant
Lead-Free Yes Yes
Uri ng Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Tc=25°C — 114 A
On-Resistance RDS(on) max at VGS=10V — 7.3 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Power Dissition (PD) at Tc=25°C — 214 W
Packhaging — PG-TO263-3-2 (D2PAK-3L, surface mount)
Packaging — Tape and Reel (suffix ATMA1)
Configuration — Single N-channel, 3 pins (Gate, Drain, Source)
MSL (Moisture Sensitivity Level) — [DATA_NEEDED: MSL level]

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