IPB120N04S402ATMA1 vs IPC100N04S5L1R5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPB120N04S402ATMA1 sa pamamagitan ng Infineon at IPC100N04S5L1R5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPB120N04S402ATMA1 IPB120N04S402ATMA1 - 40V 120A OptiMOS-T2 N-FET D2PAK | Infineon

IPB120N04S402ATMA1 - 40V 120A OptiMOS-T2 N-FET D2PAK | Infineon

IPB120N04S402ATMA1 ✓ Nakahanda
Infineon
IPC100N04S5L1R5ATMA1 IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPB120N04S402ATMA1 IPC100N04S5L1R5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T2 OptiMOS-5 40 V
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, TC) 120 A —
Power Dissipation (PD, TC) 158 W —
RDS(on) (typ @ VGS=10 V) 1.8 mΩ —
Packhaging PG-TO263-3 (D2PAK) PG-TDSON-8-34 (SS08 leadless)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 3 (2 + Tab) —
Hanay ng Temperature na Operasyon -55 °C to +175 °C -55C to +175C
Maximum Junction Temperature 175 °C —
Gate Threshold Voltage (VGS(th), typ) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg, typ) [DATA_NEEDED: total gate charge] —
Avalanche Energy Rating 100% Avalanche Tested —
Level ng Sensitivity sa Asid ng Moisture (MSL) MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) —
Automotive Qualification AEC-Q101 —
RoHS Compliance Green Product (RoHS compliant) —
Polarity / Channel Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) Max — 40 V
Gate-Source Voltage (VGS) Max — 20 V
Continuous Drain Current (ID) at Tc=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Power Dissipation (PD) at Tc=25C — 115 W
On-Resistance RDS(on) at VGS=10 V — 1.5 mOhm (typ)
On-Resistance RDS(on) at VGS=4.5 V — 1.8 mOhm (typ)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ]
Level ng MSL — MSL1 (260C peak reflow)
AEC-Q101 Qualified — Yes
Tindminan RoHS — Compliant (Green Product)
Avalanche Tested — 100%

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