IPB120N04S402ATMA1 vs IPC100N04S5L1R5ATMA1 比較

詳細並排比較 IPB120N04S402ATMA1 由 Infineon 與 IPC100N04S5L1R5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPB120N04S402ATMA1 IPB120N04S402ATMA1 - 40V 120A OptiMOS-T2 N-FET D2PAK | Infineon

IPB120N04S402ATMA1 - 40V 120A OptiMOS-T2 N-FET D2PAK | Infineon

IPB120N04S402ATMA1 ✓ 啟用中
Infineon
IPC100N04S5L1R5ATMA1 IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 ✓ 啟用中

規格比較

參數 IPB120N04S402ATMA1 IPC100N04S5L1R5ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T2 OptiMOS-5 40 V
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, TC) 120 A —
Power Dissipation (PD, TC) 158 W —
RDS(on) (typ @ VGS=10 V) 1.8 mΩ —
封裝 PG-TO263-3 (D2PAK) PG-TDSON-8-34 (SS08 leadless)
安裝類型 Surface Mount Surface Mount
腳位數 3 (2 + Tab) —
工作溫度範圍 -55 °C to +175 °C -55C to +175C
Maximum Junction Temperature 175 °C —
Gate Threshold Voltage (VGS(th), typ) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg, typ) [DATA_NEEDED: total gate charge] —
Avalanche Energy Rating 100% Avalanche Tested —
濕度敏感等級 (MSL) MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) —
Automotive Qualification AEC-Q101 —
RoHS Compliance Green Product (RoHS compliant) —
Polarity / Channel Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) Max — 40 V
Gate-Source Voltage (VGS) Max — 20 V
Continuous Drain Current (ID) at Tc=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Power Dissipation (PD) at Tc=25C — 115 W
On-Resistance RDS(on) at VGS=10 V — 1.5 mOhm (typ)
On-Resistance RDS(on) at VGS=4.5 V — 1.8 mOhm (typ)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ]
MSL 等級 — MSL1 (260C peak reflow)
AEC-Q101 Qualified — Yes
RoHS 狀態 — Compliant (Green Product)
Avalanche Tested — 100%

資料表與資源

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