IPB60R165CPATMA1 - 600V 165mΩ CoolMOS CP N-Channel MOSFET | Infineon
MPN: IPB60R165CPATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.95 | $3.95 |
| 10 | $3.42 | $34.20 |
| 100 | $2.89 | $289.00 |
| 500 | $2.45 | $1,225.00 |
| 1,000 | $2.1 | $2,100.00 |
| 3,000 | $1.78 | $5,340.00 |
Drop-in alternatives for IPB60R165CPATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPB60R160C6ATMA1
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IPD60R385CPATMA1
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$0.42 / Unit
View Datasheet →IPB50R140CPATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPD60R145CFD7ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
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View Datasheet →IPD60R380C6ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
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View Datasheet →IPB60R165CPATMA1 Maximum Ratings & Electrical Characteristics
| Technology | CoolMOS CP (superjunction, N-Channel) |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | 21 A |
| Power Dissipation (PD, Tc=25°C) | 192 W |
| On-Resistance RDS(on), max (VGS=10V) | 165 mΩ |
| Gate-Source Voltage (VGS) | ±20 V |
| Gate Threshold Voltage (VGS(th), typ) | 3.5 V |
| Operating Temperature Range (TJ) | -55°C to +150°C |
| Package | PG-TO263-3-2 (D2PAK-2) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant (Pb-free lead plating) |
| JEDEC Qualification | Qualified per JEDEC for target applications |
| dv/dt Ruggedness | Extreme dv/dt rated |
| Polarity / Channel | N-Channel |
IPB60R165CPATMA1 Pin Configuration
| Pin 1 | Gate — Gate input; drive with 10V-15V for full enhancement |
| Pin 2 | Drain — Drain terminal (also connected to exposed metal tab on backside) |
| Pin 3 | Source — Source terminal |
| Pin TAB | Drain — Exposed thermal pad - internally connected to Drain (pin 2); must be soldered to PCB copper pad for thermal dissipation |
Safe Operating Area - IPB60R165CPATMA1
Typical Applications
IPB60R165CPATMA1 is suitable for 6 applications: Server & Telecom SMPS Primary-Side Switch, Power Factor Correction (PFC) Boost Stage, Solar Inverter DC-DC Stage, Industrial Motor Drive Inverter, EV On-Board Charger (OBC) PFC Stage, Telecom Rectifier Hot-Swap / ORing Stage.
Server & Telecom SMPS Primary-Side Switch
The IPB60R165CPATMA1 is engineered for the primary-side hard-switching position in 1 kW-3 kW server and telecom switched-mode power supplies (SMPS) operating from universal-mains input. Its 600V VDS rating comfortably exceeds 400V rectified bus rails with margin for transient spikes, while the 165 mΩ max RDS(on) at VGS=10V keeps conduction loss under 5W at typical 6A-10A primary currents. The CoolMOS CP superjunction technology achieves a low figure-of-merit (RDS(on) × Qg) that enables 100 kHz-200 kHz switching frequencies, reducing transformer and output filter size. Place this MOSFET in the active clamp or half-bridge primary leg with a 10V-12V gate drive; ensure source-inductance loop is minimized via Kelvin connection for clean switching transitions and minimal ringing.
Recommended
Power Factor Correction (PFC) Boost Stage
The IPB60R165CPATMA1 excels in continuous-conduction-mode (CCM) PFC boost stages for industrial drives and 1 kW-5 kW power supplies. Its 600V rating handles 400V rectified mains with adequate surge margin, while the 21A continuous drain current supports boost inductor peak currents up to 15A. The CoolMOS CP family's low Qg and Coss,eff reduce switching loss in the boost diode recovery transition, allowing >97% efficiency in 2-stage PFC+LLC designs. Position the MOSFET between the bridge rectifier and boost diode with a 10Ω-22Ω gate resistor to dampen dv/dt ringing; thermal management via 1-2 square inches of copper pour on the D2PAK-2 tab is essential at 100W+ dissipation.
Recommended
Solar Inverter DC-DC Stage
The IPB60R165CPATMA1 is well-matched to residential and small-commercial solar inverter boost and full-bridge stages operating at 400V-500V DC bus. Its 600V breakdown provides safe margin above 600V open-circuit PV string voltages, and the 165 mΩ RDS(on) at VGS=10V balances conduction and switching loss at the 50 kHz-100 kHz frequencies typical in modern transformerless inverters. The CoolMOS CP superjunction technology reduces reverse-recovery loss in hard-switched bridge legs, improving CEC-weighted efficiency by 0.3%-0.5% versus planar MOSFETs. Use it in the high-side position of a full-bridge with synchronized gate drive; pair with SiC Schottky diodes for the lowest switching loss in the boost leg.
Recommended
Industrial Motor Drive Inverter
The IPB60R165CPATMA1 serves in the brake-chopper and auxiliary power stages of low-voltage industrial motor drives (380V-480V AC bus). Its 600V rating handles 750V DC link transients, while the 21A continuous drain current suits 5 HP-10 HP drive ratings. CoolMOS CP technology reduces switching loss in the brake chopper, which dissipates regenerative energy during motor deceleration. The D2PAK-2 surface-mount package allows automated PCB assembly in compact IPM-style drive modules. Configure the brake chopper with a TVS clamp and gate-drive IC rated for 4 kV ESD; verify thermal performance with at least 1 square inch of PCB copper at 1 oz weight.
Recommended
EV On-Board Charger (OBC) PFC Stage
The IPB60R165CPATMA1 is suited for the PFC boost stage of 3.3 kW-7 kW electric-vehicle on-board chargers (OBCs) operating from 230V AC single-phase input. The 600V VDS rating handles 400V DC link with comfortable margin for automotive load-dump transients, and the 165 mΩ RDS(on) keeps conduction loss manageable at 8A-12A PFC inductor current. CoolMOS CP's low Qg enables 100 kHz switching frequency, reducing OBC magnetic volume by 30%-40% versus 65 kHz designs. Place the MOSFET in totem-pole or bridgeless PFC configuration; pair with an isolated gate driver and verify AEC-Q101 qualification requirements if the OBC design targets automotive-grade reliability.
Recommended
Telecom Rectifier Hot-Swap / ORing Stage
The IPB60R165CPATMA1 can be deployed in telecom -48V rectifier intermediate bus converters and ORing FETs for 380V DC distribution architectures. While its 600V rating is over-specified for 48V rails, it is ideal for the high-voltage intermediate bus (HVI-Bus) at 380V DC where efficiency and density are paramount. The 165 mΩ RDS(on) at VGS=10V minimizes conduction loss, and the CoolMOS CP technology enables high switching frequencies that shrink transformer and inductor footprints. Use it in a half-bridge LLC primary leg with synchronous rectification on the secondary; ensure gate-drive IC provides 1-2 µs dead-time control to prevent shoot-through.
Recommended
Recommended Products Summary
Engineering reference data for IPB60R165CPATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB60R160C6ATMA1 | IPD60R385CPATMA1 | IPB50R140CPATMA1 | IPD60R145CFD7ATMA1 | IPD60R380C6ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO263-3-2 (D2PAK-2) | PG-TO263-3-2 (D2PAK-2) - same | PG-TO263-3-2 (D2PAK-2) - same | PG-TO263-3-2 (D2PAK-2) - same | PG-TO252 (DPAK) - smaller | PG-TO252 (DPAK) - smaller |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 500 V | 600 V | 600 V |
| RDS(on) max @ VGS=10V | 165 mΩ | 160 mΩ | 385 mΩ | 140 mΩ | 145 mΩ | 380 mΩ |
| Continuous Drain Current (Tc=25°C) | 21 A | 22 A | 12 A | 22 A | 15 A | 13 A |
| Technology Family | CoolMOS CP | CoolMOS C6 | CoolMOS CP | CoolMOS CP | CoolMOS CFD7 | CoolMOS C6 |
| Power Dissipation (Tc=25°C) | 192 W | 200 W | 104 W | 198 W | [DATA_NEEDED] | [DATA_NEEDED] |
| JEDEC Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| Unit Price (qty-1, USD) | 3.95 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Lower on-resistance than higher-voltage rated alternatives in same package (vs IPB60R160C6ATMA1)
- Higher current capability than lower-cost same-family alternatives (vs IPD60R385CPATMA1)
- 600V rating with CoolMOS CP's superior figure-of-merit (vs IPB50R140CPATMA1)
Design Notes
Estimated: The D2PAK-2 (PG-TO263-3-2) package has a typical theta_JC of approximately 0.65°C/W and theta_JA of ~62°C/W on a 1 oz copper 1-square-inch PCB pad. At 21A continuous drain current with 165 mΩ RDS(on), worst-case conduction loss is approximately P = I² × R = 21² × 0.165 ≈ 73W. With junction-to-ambient of 62°C/W, junction temperature rise above 25°C ambient reaches 25 + (73 × 62) ≈ 4551°C, which exceeds the 150°C TJ max - this confirms the device MUST be mounted on a substantial copper thermal pad (≥1.5 in²) or with forced-air cooling for high-current continuous operation. The 192W Tc rating assumes case temperature held at 25°C by an infinite heatsink.
Use a Kelvin (gate-drive return) connection between the gate driver's GND and the MOSFET source pin to minimize source-inductance-induced gate-rail ringing. The D2PAK-2 exposed tab must be soldered to a copper pad of at least 1 in² (1 oz copper) on the top side, with thermal vias (≥9 vias, 0.3 mm diameter) connecting to an internal copper plane. Gate-drive trace should be kept short (<20 mm) and routed away from the drain-node switching loop to minimize dv/dt coupling into the gate. A 10Ω-22Ω gate resistor in series with the gate pin damps parasitic ringing without significantly slowing switching transitions.
Minimize the high-current switching loop area between the MOSFET drain, transformer primary winding, and bulk capacitor. In a half-bridge LLC primary leg, the high-side and low-side MOSFETs should be placed with their drains and sources facing each other across the transformer primary winding to halve the switching loop inductance. Place the bootstrap capacitor (for high-side gate drive) as close as possible to the high-side MOSFET's source and the bootstrap diode. Snubber networks (RC or RCD) across the drain-source of each MOSFET reduce dv/dt-induced voltage spikes on the 600V-rated drain node during commutation events.
Do not exceed VGS=±20V - gate-oxide breakdown is permanent and not recoverable. Never operate the MOSFET without confirming VGS > 10V at full enhancement; partial enhancement causes linear-mode operation with extreme power dissipation. The body diode of CoolMOS CP devices has moderate reverse-recovery - in bridge topologies, parallel a SiC Schottky diode or use the CoolMOS CFD7 family (IPD60R145CFD7ATMA1) which has an integrated fast body diode. Verify the PCB pad pattern matches JEDEC TO-263 land pattern recommendations - some D2PAK-2 variants differ in thermal-pad dimensions.
Compliance Information
Pb-free lead plating per Infineon datasheet. RoHS compliant. JEDEC-qualified for target applications. Halogen-free status not explicitly stated in retrieved data; set to 'unknown' per data authenticity rules. For automotive-grade applications requiring AEC-Q100/Q101, consult Infineon automotive-grade CoolMOS portfolio.
