IPB60R190C6ATMA1 vs IPD80R600P7ATMA1 Perbandingan
Perbandingan bersamaan detil IPB60R190C6ATMA1 dari Infineon dan IPD80R600P7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPB60R190C6ATMA1 | IPD80R600P7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | CoolMOS C6 Superjunction N-Channel MOSFET | CoolMOS P7 super-junction |
| Drain-Source Voltage (VDS) | 600 V | 800 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | — |
| Power Dissipation (PD) at Tc=25C | 151 W | — |
| On-Resistance RDS(on) max at VGS=10V | 190 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typ) | 3 V (typical) |
| Total Gate Charge (Qg) typ | 32 nC | — |
| Rentang Suhu Kerja | -55C to +150C | -55 C to +150 C |
| Paket | PG-TO263-3 (D2PAK) | PG-TO252-3 (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (Gate, Drain, Source) | — |
| Level MSL | 1 | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | — |
| Avalanche Energy Rated | Yes (EAS per datasheet) | — |
| Continuous Drain Current (ID, Tc) | — | 8 A |
| Pulsed Drain Current (IDM) | — | 22 A |
| On-Resistance (RDS(on), max) | — | 600 mΩ at VGS=10V |
| Maximum Power Dissipation (Ptot) | — | 60 W (Tc) |
| Maximum Gate-Source Voltage (VGS) | — | ±30 V |
| Avalanche Energy, Single Pulse (EAS) | — | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | — | 0.17 mJ |
| Polarity | — | N-Channel |