IPB70N10S3L12ATMA1 - 100V 70A 11.8mΩ OptiMOS N-Ch MOSFET | Infineon
MPN: IPB70N10S3L12ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.42 | $3.42 |
| 10 | $2.98 | $29.80 |
| 100 | $2.31 | $231.00 |
| 500 | $1.92 | $960.00 |
| 1,000 | $1.65 | $1,650.00 |
Drop-in alternatives for IPB70N10S3L12ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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IPB70N10S3-12
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View Datasheet →IPB70N10S3L12ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS (IPB70N10) |
| Transistor Type | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC=25°C | 70 A |
| Peak Drain Current (IDM) | 180 A |
| On-Resistance RDS(on) max at VGS=10V | 11.8 mΩ |
| Power Dissipation (PD) at TC=25°C | 125 W |
| Operating Junction Temperature | -55 °C to +175 °C |
| Package / Case | PG-TO263-3-2 (D2PAK, 2 Leads + Tab) |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q101 Qualified |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 °C peak reflow) |
| RoHS / Green | RoHS Compliant, Green Product |
| Avalanche Tested | 100 % Avalanche Tested |
| Halogen-Free | Yes |
IPB70N10S3L12ATMA1 Pin Configuration
| Pin 1 | Gate — MOSFET gate drive input (logic-level compatible) |
| Pin 2 | Drain — Drain connection, also bonded to metal tab on backside |
| Pin 3 | Source — MOSFET source, Kelvin-return reference for gate driver |
| Pin Tab | Drain (Tab) — Backside metal tab = Drain, primary thermal path; must be soldered to PCB copper pour |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IPB70N10S3L12ATMA1 is suitable for 6 applications: 48 V Automotive Inverter Stage, 48 V to 12 V DC-DC Converter, Electric Power Steering (EPS) Motor Drive, Industrial Switched-Mode Power Supply (SMPS), Battery Management ORing and Protection Switch, High-Power Synchronous Rectification.
48 V Automotive Inverter Stage
The IPB70N10S3L12ATMA1 is well suited to 48 V automotive inverter half-bridge stages for mild-hybrid electric vehicle (MHEV) powertrains. Its 100 V VDS provides ample headroom above the 48 V nominal bus, while the 11.8 mΩ RDS(on) keeps conduction loss below 1 % at 50 A switching current — critical for inverter efficiency targets. The 180 A peak current rating tolerates motor inrush and short-circuit events, and AEC-Q101 qualification with 175 °C junction rating is mandatory for under-hood automotive deployment. The D2PAK footprint mounts to the inverter cold plate via the metal tab, dissipating 125 W with proper thermal interface.
Recommended
48 V to 12 V DC-DC Converter
In bidirectional 48 V/12 V DC-DC converters for automotive power nets, the IPB70N10S3L12ATMA1 serves as the synchronous rectifier on the 48 V side, switching at 100-250 kHz. Its 11.8 mΩ RDS(on) plus low gate charge minimise both conduction and switching losses, supporting peak efficiencies above 96 % at 1-2 kW load. The 100 V VDS rating handles the 48 V bus plus transients up to 70 V, while AEC-Q101 and 175 °C operation enable placement near the engine compartment. The D2PAK-3 footprint matches existing Infineon reference designs and parallel multiple devices for higher current.
Recommended
Electric Power Steering (EPS) Motor Drive
The IPB70N10S3L12ATMA1 is ideal for column-assist and rack-assist EPS motor drives, where 70 A continuous / 180 A pulsed capability matches the 80-100 A peak phase currents seen during parking manoeuvres. Its 11.8 mΩ RDS(on) reduces I²R heating in the high-side/low-side switches, allowing the steering ECU to fit a smaller heatsink. AEC-Q101 qualification and -55 °C cold-start capability are mandatory for safety-critical steering systems. The D2PAK package supports reflow soldering onto the ECU PCB and provides a robust thermal path for sustained 30-40 A RMS phase currents.
Recommended
Industrial Switched-Mode Power Supply (SMPS)
In high-power industrial SMPS designs (3-5 kW telecom rectifiers, server PSU front-end), the IPB70N10S3L12ATMA1 operates as the main switching FET or synchronous rectifier on the 48-72 V DC bus. Its 100 V VDS, 11.8 mΩ RDS(on), and 125 W dissipation handle continuous currents of 30-50 A at high frequency (100-200 kHz). The D2PAK footprint allows single-device or easy paralleled configurations for higher power, and the OptiMOS technology delivers low gate charge (Qg) for reduced driver losses. Industrial-grade variants of the same die are also available for cost-sensitive designs.
Recommended
Battery Management ORing and Protection Switch
The IPB70N10S3L12ATMA1 is well suited to high-current ORing and battery disconnect switches in 48 V battery management systems (BMS) and server UPS architectures. Its 70 A continuous / 180 A pulsed rating handles 1-3 kW battery channels, and the 11.8 mΩ RDS(on) keeps the always-on conduction loss under 0.3 W per device at 5 A. The 100 V VDS tolerates load-dump transients above the 48 V rail, and AEC-Q101 plus 175 °C rating meet automotive BMS requirements. The D2PAK-3 footprint simplifies PCB layout for high-current bus bars.
Recommended
High-Power Synchronous Rectification
The IPB70N10S3L12ATMA1 works as the synchronous rectifier MOSFET in high-current isolated DC-DC stages (forward, full-bridge, LLC) where 48-100 V rails deliver 20-50 A. Its 11.8 mΩ RDS(on) outperforms Schottky diodes at these current levels, reducing rectification loss by 5-10 W per device and boosting overall efficiency by 1-2 %. The OptiMOS technology's low Qrr and low Qg minimise body-diode reverse-recovery losses and driver losses. Mounted in D2PAK with sufficient copper, the part can sustain 30-40 A continuous rectification with junction rise under 50 °C.
Recommended
Recommended Products Summary
Engineering reference data for IPB70N10S3L12ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB70N10S3-12 | IPD90P04P4L04ATMA2 | IPB120P04P4L03ATMA2 | BSC042NE7NS3GATMA1 | IPD90P04P405ATMA2 | BSC0902NSATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same |
| VDS (Drain-Source Voltage) | 100 V | 100 V | 100 V | 100 V | 75 V | 100 V | 100 V |
| Continuous Drain Current (ID) | 70 A | 70 A | 90 A | 120 A | 100 A | 90 A | 80 A |
| RDS(on) max @ VGS=10V | 11.8 mΩ | 11.8 mΩ | 4 mΩ | 3 mΩ | 4.2 mΩ | 4 mΩ | 12 mΩ |
| Power Dissipation (PD) at TC=25°C | 125 W | 125 W | 125 W | 125 W | 125 W | 125 W | 125 W |
| Automotive Grade (AEC-Q101) | Yes | No (industrial) | Yes | Yes | Yes | Yes | Yes |
| Max Junction Temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
Key Differentiators
- AEC-Q101 automotive grade with MSL1 to 260°C (vs IPB70N10S3-12)
- 11.8 mΩ RDS(on) at 70A in D2PAK (vs IPD90P04P4L04ATMA2)
- 100 % avalanche-tested for unclamped switching (vs BSC042NE7NS3GATMA1)
Design Notes
The PG-TO263-3-2 (D2PAK) package achieves its rated 125 W PD only when the metal tab is soldered to a substantial PCB copper area. Recommended: minimum 1 sq-in (645 sq-mm) of 2 oz copper on the drain tab pad, more for sustained 30 A+ operation. Estimated junction rise at 5 W dissipation on 1 sq-in 2 oz copper is approximately 25 °C above ambient; derate to keep TJ below 150 °C for automotive reliability margin.
Place a low-ESR ceramic bypass (10 µF X7R + 100 nF NP0) within 5 mm of the source pin to suppress gate-driver ringing caused by the package's source-inductance. Use a Kelvin-source connection (pin 3) for the gate-driver return rather than the power source bond, and keep the gate-drive loop area below 0.5 sq-cm to avoid dV/dt-induced turn-on. For 48 V bus designs, add a 100 V TVS across drain-source for transient suppression.
Do not exceed 175 °C junction temperature — Infineon's automotive derating guideline recommends TJ,max=150 °C for long-term reliability. Watch for body-diode reverse recovery in half-bridge topologies; add sufficient dead-time (≥200 ns at 100 V/70 A) and consider SiC co-pack alternatives if reverse recovery losses dominate. Verify VGS(th) is firmly above 1 V at 25 °C to prevent parasitic turn-on from dV/dt, especially at switching frequencies above 100 kHz.
Reflow profile must respect MSL1 rating up to 260 °C peak, but the recommended peak for OptiMOS automotive parts is 245-250 °C with 60-90 s above liquidus. Use a no-clean SAC305 (Sn96.5/Ag3.0/Cu0.5) solder paste and nitrogen reflow for best voiding performance under the D2PAK tab; thermal-via arrays (0.3 mm drill, 1 mm pitch) under the tab reduce junction-to-ambient thermal resistance by 30-50 %.
Compliance Information
AEC-Q101 (automotive discrete) qualified per Infineon datasheet. RoHS green product. MSL1 to 260°C peak reflow. Halogen-free per Infineon datasheet. Note: AEC-Q100 is the IC-grade automotive spec; for discrete MOSFETs the equivalent is AEC-Q101, marked as 'not_applicable' for AEC-Q100 in the IC-grade sense.
