IPC100N04S5L1R1ATMA1 vs BSC050N04LSGATMA1 Perbandingan

Perbandingan bersamaan detil IPC100N04S5L1R1ATMA1 dari Infineon dan BSC050N04LSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC050N04LSGATMA1 BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPC100N04S5L1R1ATMA1 BSC050N04LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS-5 40 V —
Tipe Transistor N-Channel Enhancement Mode —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC 100 A —
On-Resistance RDS(on) max 1.1 mΩ —
Power Dissipation (PD) at TC 150 W —
Gate Threshold Voltage VGS(th) Logic Level —
Rentang Suhu Kerja -55 °C to +175 °C -55C to +150C
Paket PG-TDSON-8-34 (SS08 leadless) PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (unlimited floor life, 260 °C peak reflow) 1
Automotive Qualification AEC-Q101 qualified —
Avalanche Tested 100% avalanche tested —
RoHS Compliance Green Product (RoHS compliant) —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 40 V
Gate-to-Source Voltage (VGS) — ±20 V
Continuous Drain Current at 25C (ID, Ta) — 18 A
Continuous Drain Current at 25C (ID, Tc) — 85 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current IDM]
Power Dissipation at Ta (PD) — 2.5 W
Power Dissipation at Tc (PD) — 57 W
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at VGS=10V]
On-State Resistance (RDS(on)) at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Technology — OptiMOS 3 (trench MOSFET)
Avalanche Energy Rated — Yes (single-pulse avalanche)
Status RoHS — Compliant

Spek dan Sumber

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