IPC50N04S55R8ATMA1 vs ISC011N04NM7VATMA1 Comparison

Detailed side-by-side comparison of IPC50N04S55R8ATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPC50N04S55R8ATMA1

IPC50N04S55R8ATMA1 - 40V 50A OptiMOS 5 N-FET | Infineon

IPC50N04S55R8ATMA1 βœ“ Active
Infineon
ISC011N04NM7VATMA1

ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 βœ“ Active

Specification Comparison

Parameter IPC50N04S55R8ATMA1 ISC011N04NM7VATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.61 $0.41
FET Type N-Channel N-Channel
Technology OptiMOS 5 (trench MOSFET) Trench MOSFET, silicon
Drain-Source Voltage (V_DS) 40 V β€”
Continuous Drain Current (I_D) at Tc 50 A β€”
Power Dissipation (P_D) at Tc 42 W β€”
R_DS(on) Max (V_GS=10V) 5.8 mΞ© β€”
Output Capacitance (C_oss) 305 pF β€”
Gate Threshold (V_GS(th)) [DATA_NEEDED: V_GS(th)] β€”
Operating Temperature Range -55 Β°C to +175 Β°C -55 Β°C to +175 Β°C (TJ)
Package PG-TDSON-8-33 (TDSON EP) PG-TDSON-8 (source-down)
Mounting Type Surface Mount Surface Mount
MSL Level MSL1 (260 Β°C peak reflow) MSL 1 (per JEDEC J-STD-020)
Automotive Qualification AEC-Q101 β€”
Avalanche Rating 100% Avalanche Tested β€”
RoHS / Green RoHS compliant, Green Product β€”
Polarity Enhancement Mode β€”
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS 7 Power-Transistor
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID) at TA=25Β°C β€” 38 A
Continuous Drain Current (ID) at TC β€” 256 A
On-Resistance RDS(on) max @ VGS=10V β€” 1.1 mΞ©
Power Dissipation (TA) β€” 3 W
Power Dissipation (TC) β€” 136 W
Gate Threshold Voltage (Vth) β€” Up to 3.2 V
Short-Circuit Withstand β€” Yes (current-limited)
RoHS Compliance β€” Compliant (per Infineon product page)

Datasheets & Resources

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