IPC50N04S55R8ATMA1 - 40V 50A OptiMOS 5 N-FET | Infineon
MPN: IPC50N04S55R8ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.96 | $0.96 |
| 10 | $0.87 | $8.70 |
| 100 | $0.78 | $78.00 |
| 500 | $0.72 | $360.00 |
| 1,000 | $0.66 | $660.00 |
| 3,000 | $0.61 | $1,830.00 |
IPC50N04S55R8ATMA1 Overview
What is an N-channel power MOSFET? An N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled switch that uses an N-type conducting channel between drain and source. Power MOSFETs like the OptiMOS 5 family sit in the discrete semiconductor hierarchy: MOSFET -> FET -> transistor -> discrete semiconductor. They are the workhorse switching elements in DC-DC converters, motor drives, and load switches where high efficiency, low conduction loss, and fast switching are required. The 40 V rating positions this part in the low-voltage synchronous-rectification tier commonly used in 12 V automotive and 24 V industrial rails.
Key features of the IPC50N04S55R8ATMA1 include an ultra-low typical R_DS(on) of 5.8 mΩ at 10 V VGS, a logic-level compatible gate threshold, and a 305 pF output capacitance figure that allows fast switching transitions. The TDSON-8-33 package exposes the drain through a large thermal pad, giving a junction-to-case thermal resistance well below standard SO-8 equivalents and enabling continuous high-current operation without a separate heatsink.
Architecturally, the OptiMOS 5 platform uses Infineon's latest trench-technology cell design, balancing on-resistance, gate charge, and figure-of-merit (FOM = R_DS(on) × Qg) for synchronous-rectification and hot-swap applications. The result is a part that drops less power than its predecessors while accepting the same gate-drive rails.
Typical applications include automotive 12 V ECU switching, eMobility load management, OR-ing and hot-swap controllers, and high-current DC-DC converter synchronous-rectifier stages. The AEC-Q101 qualification makes it directly suitable for under-hood and chassis electronics where automotive reliability is mandatory.
When designing with this MOSFET, ensure the gate-drive voltage reaches at least 10 V for full enhancement, and place the gate-driver as close to the gate pin as possible to minimize the parasitic loop inductance that limits switching speed.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for IPC50N04S55R8ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPC50N04S55R8ATMA1 (same form factor and footprint) — differing in Package, MSL Level, Avalanche Tested, Technology, Operating Temperature Range.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
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View Datasheet →IPC100N04S51R7ATMA1
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View Datasheet →ISC011N04NM7VATMA1
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View Datasheet →IPD50N04S408ATMA1
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View Datasheet →IPC50N04S55R8ATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | OptiMOS 5 (trench MOSFET) |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D) at Tc | 50 A |
| Power Dissipation (P_D) at Tc | 42 W |
| R_DS(on) Max (V_GS=10V) | 5.8 mΩ |
| Output Capacitance (C_oss) | 305 pF |
| Operating Temperature Range | -55 °C to +175 °C |
| Package | PG-TDSON-8-33 (TDSON EP) |
| Mounting Type | Surface Mount |
| MSL Level | MSL1 (260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 |
| Avalanche Rating | 100% Avalanche Tested |
| RoHS / Green | RoHS compliant, Green Product |
| Polarity | Enhancement Mode |
IPC50N04S55R8ATMA1 Pin Configuration
| Pin 1 | Source — Source connection (pins 1-3, 5-8 are source) |
| Pin 2 | Source — Source connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source connection |
| Pin 6 | Source — Source connection |
| Pin 7 | Source — Source connection |
| Pin 8 | Source — Source connection |
| Pin EP | Drain — Exposed pad - drain connection, also thermal pad |
Safe Operating Area
Typical Applications
IPC50N04S55R8ATMA1 is suitable for 6 applications: Automotive 12V ECU Switching, Synchronous Rectifier in DC-DC Converters, Hot-Swap and OR-ing Controllers, eMobility BMS Load Switching, Industrial 24V Solenoid and Relay Drivers, USB PD and High-Current Load Switches.
Automotive 12V ECU Switching
The IPC50N04S55R8ATMA1's 40 V V_DS rating, 50 A continuous current and AEC-Q101 qualification make it a primary high-side or low-side switch for 12 V automotive ECU power distribution. With 5.8 mΩ R_DS(on) at 10 V V_GS, conduction loss at 20 A is only 2.3 W, allowing compact designs without external heatsinks. The TDSON-8-33 exposed pad provides thermal resistance low enough for sustained ECU load operation under the hood. The part's 100% avalanche rating also tolerates the inductive transients from relay coils and solenoids common in body-electronics modules.
Recommended
Synchronous Rectifier in DC-DC Converters
In 12 V-to-1 V buck converters for server and telecom POL rails, the IPC50N04S55R8ATMA1 serves as the synchronous rectifier (low-side) MOSFET. Its 305 pF output capacitance supports multi-MHz switching transitions, and the 5.8 mΩ R_DS(on) minimizes I²R losses at high duty cycles. Compared to using the part as the high-side switch, low-side operation does not require bootstrap-rail headroom, simplifying the gate-drive design. Efficiency improvements over standard 40 V MOSFETs at 20-30 A loads typically reach 1.5-2%.
Recommended
Hot-Swap and OR-ing Controllers
The IPC50N04S55R8ATMA1 is well suited for 12 V redundant power OR-ing and hot-swap insertion control in telecom and server backplanes. With 40 V V_DS headroom, the device absorbs transient inrush without avalanche breakdown. The 50 A continuous rating exceeds typical 30 A OR-ing diode currents, allowing direct board replacement of Schottky OR-ing solutions with a 2× efficiency improvement. AEC-Q101 qualification also suits industrial-grade telecom equipment that follows automotive reliability conventions.
Recommended
eMobility BMS Load Switching
Battery management systems in light electric vehicles and e-scooters use 40 V MOSFETs for pack-discharge switching and pre-charge circuits. The IPC50N04S55R8ATMA1's 5.8 mΩ R_DS(on) at 50 A keeps discharge conduction loss below 15 W, and the AEC-Q101 qualification satisfies eMobility OEM quality requirements. The 175 °C junction rating provides thermal margin during pre-charge transients when I²R losses peak briefly at 70-80 A. The TDSON-8-33 package's small footprint supports compact BMS PCB layouts adjacent to cell-monitoring ICs.
Recommended
Industrial 24V Solenoid and Relay Drivers
Industrial automation PLCs frequently switch 24 V solenoid and relay coils at 1-10 A. The IPC50N04S55R8ATMA1's 40 V V_DS rating covers the 24 V rail plus inductive transient overshoot from flyback spikes. Its low R_DS(on) and AEC-Q101 qualification suit harsh industrial environments where temperature cycling and vibration would otherwise degrade standard commercial MOSFETs. The exposed-pad TDSON-8-33 package is compatible with automated optical inspection (AOI) on high-volume SMT lines.
Recommended
USB PD and High-Current Load Switches
USB Power Delivery 3.1 EPR systems deliver up to 28 V at 5 A (140 W) over standard Type-C cables, requiring a 40 V load switch on the source side. The IPC50N04S55R8ATMA1 fits this role with 5.8 mΩ R_DS(on) limiting conduction loss to ~1.5 W at 5 A. The exposed-pad package dissipates this heat without a heatsink. Compared to 30 V parts, the 40 V rating adds 25% margin against USB PD voltage transients during fast role-swap events, improving system robustness.
Recommended
Recommended Products Summary
Engineering reference data for IPC50N04S55R8ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPC50N04S5L5R5ATMA1 | IPC70N04S5L4R2ATMA1 | IPC100N04S51R7ATMA1 | ISC011N04NM7VATMA1 | IPD50N04S408ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-33 | PG-TDSON-8-33 - same | PG-TDSON-8-33 - same | PG-TDSON-8-33 - same | PG-TDSON-8-33 - same | PG-TDSON-8-33 - same |
| V_DS Max | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| R_DS(on) Typ @ 10V | 5.8 mΩ | 5.5 mΩ | 4.2 mΩ | 1.7 mΩ | 7 mΩ | 8 mΩ |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| Series | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 7 | OptiMOS 5 |
Key Differentiators
- Lowest-cost drop-in in TDSON-8-33 with 5.8 mΩ R_DS(on) (vs IPC50N04S5L5R5ATMA1)
- Balanced figure-of-merit (R_DS(on) × Qg) for high-frequency sync-rectifier use (vs IPC100N04S51R7ATMA1)
- AEC-Q101 qualified at MSL1 for direct automotive use (vs ISC011N04NM7VATMA1)
Design Notes
Estimated: at 30 A continuous conduction, P_loss = I²×R_DS(on) = 30²×0.0058 = 5.22 W. The TDSON-8-33 package has a typical R_theta_JC of ~1.5 °C/W, giving a junction-to-case temperature rise of ~7.8 °C above the case. PCB layout is critical: at least 1 square inch of 2 oz copper on the drain pad keeps R_theta_JA below 50 °C/W. Without a thermal via array, the part can easily exceed 150 °C junction at full current - violating the 175 °C max with no margin for transient overshoot.
The gate-driver loop (driver output, gate resistor, gate pin, source return) must be minimized to <5 mm total loop length to control ringing. Place a 10 Ω gate resistor in series to damp the LC resonance from gate-source capacitance and source-lead inductance. For switching frequencies above 500 kHz, add a ferrite bead on the gate-drive path to suppress common-mode noise injection back into the controller. The exposed pad (drain) MUST be soldered - both for thermal performance and for the 50 A current capability rating.
Never operate the IPC50N04S55R8ATMA1 at V_GS below 4.5 V - the part is specified at 10 V V_GS for the R_DS(on) figure, and partial enhancement dramatically increases conduction loss. A common error is driving the gate from a 3.3 V logic output through a charge pump that fails at cold temperatures; always verify gate-drive amplitude over the full -40 °C to +125 °C automotive range. Also avoid exceeding the 40 V V_DS during flyback transients - add a TVS clamp or RC snubber if the load is inductive (relay coils, solenoids, transformers).
Recommended land pattern uses 6 thermal vias (0.3 mm diameter) in the exposed pad to the inner-layer copper plane. For double-sided PCBs, use 1 oz copper on top and 2 oz on bottom; for 4-layer boards, dedicate layer 2 as a thermal/ground plane stitched directly under the part. Source-pin copper pours (pins 1-3 and 5-8) carry the full 50 A and must be at least 5 mm wide on the top layer. Keep the high-current loop (drain-switch-source-load) physically small to minimize parasitic inductance.
Compliance Information
AEC-Q101 (automotive discrete semiconductor standard) qualified per alldatasheet.com listing. RoHS compliant Green Product per Infineon. MSL1 rated for direct reflow at 260 °C peak.
