IPD038N06NF2SATMA1 vs IPD082N10N3GATMA1 Perbandingan
Perbandingan bersamaan detil IPD038N06NF2SATMA1 dari Infineon dan IPD082N10N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPD038N06NF2SATMA1 | IPD082N10N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS (Trench) | OptiMOS 3 (Trench N-Channel) |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID) at TC=25°C | 120 A | — |
| Continuous Drain Current (ID) at TA=25°C | 20 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 3.85 mΩ max | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typical/max] |
| Typical Gate Charge (Qg) at VGS=10V | 68 nC | — |
| Input Capacitance (Ciss) | 6700 pF | — |
| Output Capacitance (Coss) | 670 pF | — |
| Reverse Transfer Capacitance (Crss) | 43 pF | — |
| Power Dissipation (PD) at TA=25°C | 3 W | — |
| Power Dissipation (PD) at TC=25°C | 107 W | — |
| Suhu Hubung Kerja | -55°C to +175°C | -55°C to +175°C |
| Paket | PG-TO252-3 (DPAK) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Channel Mode | Enhancement | — |
| Part Number | — | IPD082N10N3GATMA1 |
| Manufacturer | — | Infineon Technologies |
| Continuous Drain Current (ID) @ Tc=25°C | — | 80 A |
| On-Resistance RDS(on) max @ VGS=10 V | — | 8.2 mΩ |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) @ Tc=25°C | — | 125 W |
| Paket / Case | — | PG-TO252-3 (DPAK), surface mount |
| Jumlah Pin | — | 3 (Gate, Drain, Source) |
| Automotive Qualified (AEC-Q101) | — | Not applicable (industrial/consumer grade) |
| Lead-Free | — | Yes |
| Level MSL | — | 1 (per JEDEC J-STD-020) |