IPD038N06NF2SATMA1 vs IPD082N10N3GATMA1 比較

詳細並排比較 IPD038N06NF2SATMA1 由 Infineon 與 IPD082N10N3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPD038N06NF2SATMA1 IPD038N06NF2SATMA1 - 60V 120A OptiMOS N-MOSFET | Infineon

IPD038N06NF2SATMA1 - 60V 120A OptiMOS N-MOSFET | Infineon

IPD038N06NF2SATMA1 ✓ 啟用中

規格比較

參數 IPD038N06NF2SATMA1 IPD082N10N3GATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Technology OptiMOS (Trench) OptiMOS 3 (Trench N-Channel)
Drain-Source Voltage (VDS) 60 V 100 V
Continuous Drain Current (ID) at TC=25°C 120 A —
Continuous Drain Current (ID) at TA=25°C 20 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max ±20 V —
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 3.85 mΩ max —
Static Drain-Source On-Resistance (RDS(on)) at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] [DATA_NEEDED: VGS(th) typical/max]
Typical Gate Charge (Qg) at VGS=10V 68 nC —
Input Capacitance (Ciss) 6700 pF —
Output Capacitance (Coss) 670 pF —
Reverse Transfer Capacitance (Crss) 43 pF —
Power Dissipation (PD) at TA=25°C 3 W —
Power Dissipation (PD) at TC=25°C 107 W —
工作接面溫度 -55°C to +175°C -55°C to +175°C
封裝 PG-TO252-3 (DPAK) —
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant
Channel Mode Enhancement —
Part Number — IPD082N10N3GATMA1
Manufacturer — Infineon Technologies
Continuous Drain Current (ID) @ Tc=25°C — 80 A
On-Resistance RDS(on) max @ VGS=10 V — 8.2 mΩ
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (PD) @ Tc=25°C — 125 W
封裝 / 外殼 — PG-TO252-3 (DPAK), surface mount
腳位數 — 3 (Gate, Drain, Source)
Automotive Qualified (AEC-Q101) — Not applicable (industrial/consumer grade)
Lead-Free — Yes
MSL 等級 — 1 (per JEDEC J-STD-020)

資料表與資源

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