IPD042P03L3GATMA1 vs IRFR2405TRLPBF Perbandingan
Perbandingan bersamaan detil IPD042P03L3GATMA1 dari Infineon dan IRFR2405TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD042P03L3GATMA1 | IRFR2405TRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -30 V | 55 V |
| Continuous Drain Current (ID, Tc=25°C) | -70 A | — |
| Pulsed Drain Current (IDM) | -280 A | 200 A (typical, per datasheet family) |
| RDS(on) max @ VGS = -10 V | 4.2 mΩ | — |
| RDS(on) max @ VGS = -4.5 V | [DATA_NEEDED: RDS(on) @ -4.5 V] | — |
| Gate Threshold Voltage (VGS(th)) | -1.5 V (typ) | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Total Power Dissipation (PD @ Tc=25°C) | 150 W | — |
| Single-Pulse Avalanche Energy (EAS) | 290 mJ | — |
| Rentang Suhu Kerja | -55°C to +175°C (TJ) | -55 C to +175 C (junction) |
| Paket | PG-TO252-3 (DPAK) | TO-252AA (DPAK), 3-pin (2 + Tab) |
| Technology | OptiMOS™ P (Trench) | HEXFET (IR MOSFET, 7th generation) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | — |
| Level MSL | 1 | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 56 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 16 mOhm |
| Gate Charge (Qg) typical | — | 70 nC |
| Power Dissipation (PD) at Tc | — | 110 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Avalanche Energy Rated | — | Yes (HEXFET ruggedized design) |
| Lead-Free / RoHS | — | Yes, PBF suffix indicates lead-free and RoHS compliant |
| Packaging | — | Tape & Reel (TR) |