IPD060N03LGATMA1 vs IPD042P03L3GATMA1 Comparison
Detailed side-by-side comparison of IPD060N03LGATMA1 by Infineon and IPD042P03L3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD060N03LGATMA1 | IPD042P03L3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.20 | $0.28 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 30V | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | -30 V |
| Continuous Drain Current (ID, TC=25C) | 50 A | β |
| Pulsed Drain Current (IDM, TC=25C, tp<=10us) | 200 A | β |
| Gate-Source Voltage (VGS) | +/-20 V | β |
| Gate Threshold Voltage (VGS(th), typ) | 1.7 V | β |
| On-State Resistance (RDS(on), VGS=10V) | 6.0 mOhm (typ) / 7.5 mOhm (max) | β |
| On-State Resistance (RDS(on), VGS=4.5V) | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Total Gate Charge (Qg, typ) | 21 nC | β |
| Output Charge (Qoss, typ) | [DATA_NEEDED: Qoss] | β |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | β |
| Power Dissipation (PD, TC=25C) | 56 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Thermal Resistance Junction-to-Case (RthJC, max) | 2.5 C/W | β |
| Thermal Resistance Junction-to-Ambient (RthJA, max, std PCB) | 62 C/W | β |
| Package / Case | PG-TO252-3 (DPAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (Unlimited) | 1 |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | β |
| Packing | Tape & Reel (T/R), 2500 per reel | β |
| AEC-Q101 / Automotive Grade | Not qualified | β |
| Technology / Generation | OptiMOS 30V, trench MOSFET | β |
| Polarity | β | P-Channel |
| Continuous Drain Current (ID, Tc=25Β°C) | β | -70 A |
| Pulsed Drain Current (IDM) | β | -280 A |
| RDS(on) max @ VGS = -10 V | β | 4.2 mΞ© |
| RDS(on) max @ VGS = -4.5 V | β | [DATA_NEEDED: RDS(on) @ -4.5 V] |
| Gate Threshold Voltage (VGS(th)) | β | -1.5 V (typ) |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Total Power Dissipation (PD @ Tc=25Β°C) | β | 150 W |
| Single-Pulse Avalanche Energy (EAS) | β | 290 mJ |
| Operating Temperature Range | β | -55Β°C to +175Β°C (TJ) |
| Package | β | PG-TO252-3 (DPAK) |
| Technology | β | OptiMOSβ’ P (Trench) |