IPD060N03LGATMA1 - 30V 50A OptiMOS N-Ch MOSFET | Infineon
MPN: IPD060N03LGATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.47 | $0.47 |
| 10 | $0.42 | $4.20 |
| 100 | $0.33 | $33.00 |
| 500 | $0.27 | $135.00 |
| 1,000 | $0.23 | $230.00 |
| 2,500 | $0.2 | $500.00 |
Drop-in alternatives for IPD060N03LGATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IPD060N03LGBTMA1
β Drop-Inπ Reference alternative (not in catalog)
IPD090N03LGATMA1
β Drop-Inβ In Stock
$0.34 / Unit
View Datasheet βIPD050N03LGATMA1
β Drop-Inπ Reference alternative (not in catalog)
NTMFS4C029N
β Drop-Inπ Reference alternative (not in catalog)
SiRA12DP
β Drop-Inπ Reference alternative (not in catalog)
DMG3415U-7
β Drop-Inπ Reference alternative (not in catalog)
IPD060N03LGATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 30V |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID, TC=25C) | 50 A |
| Pulsed Drain Current (IDM, TC=25C, tp<=10us) | 200 A |
| Gate-Source Voltage (VGS) | +/-20 V |
| Gate Threshold Voltage (VGS(th), typ) | 1.7 V |
| On-State Resistance (RDS(on), VGS=10V) | 6.0 mOhm (typ) / 7.5 mOhm (max) |
| Total Gate Charge (Qg, typ) | 21 nC |
| Power Dissipation (PD, TC=25C) | 56 W |
| Operating Junction Temperature | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC, max) | 2.5 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA, max, std PCB) | 62 C/W |
| Package / Case | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (Unlimited) |
| RoHS Status | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes |
| Packing | Tape & Reel (T/R), 2500 per reel |
| AEC-Q101 / Automotive Grade | Not qualified |
| Technology / Generation | OptiMOS 30V, trench MOSFET |
IPD060N03LGATMA1 Pin Configuration
| Pin 1 | Gate β Gate drive input; logic-level (1.7V typical Vth), drive with 4.5V-10V |
| Pin 2 | Drain β Drain terminal; also electrically tied to the exposed metal tab on the bottom of the package |
| Pin 3 | Source β Source terminal; connect to system ground (low-side) or switching-node source (high-side) |
Safe Operating Area - IPD060N03LGATMA1 (TC=25C)
Typical Applications
IPD060N03LGATMA1 is suitable for 6 applications: 12V Synchronous Rectification in VRM / Buck Converters, Hot-Swap / OR-ing Protection in Telecom Boards, Low-Side Switch in BLDC Motor Drive, Battery Protection in 1S-3S Lithium-Ion Packs, Class-D Audio Amplifier Output Stage, High-Current USB-PD / Point-of-Load Buck.
12V Synchronous Rectification in VRM / Buck Converters
The IPD060N03LGATMA1's 6 mOhm RDS(on) at VGS=10V and 21 nC typical total gate charge place it among the lowest-FOM 30V trench MOSFETs in the PG-TO252 footprint, making it a textbook choice for the low-side synchronous rectifier in 12V-input multiphase buck converters that feed CPUs, ASICs, and DDR memory. The logic-level gate threshold (1.7V typical) permits direct PWM drive from 3.3V-5V controllers such as the Infineon IR35201 without a discrete gate-driver IC, shrinking the BOM and shrinking switching-node ringing because the gate-drive loop inductance is shorter. Compared with older standard-Vth parts, the IPD060N03L cuts conduction loss by roughly 30% at 20A continuous and reduces switching loss at 500kHz by ~25% per the Infineon OptiMOS FOM comparison, directly improving VRM efficiency by 0.5-1.0 percentage points.
Recommended
Hot-Swap / OR-ing Protection in Telecom Boards
In -48V telecom distributions stepped down to 12V, the IPD060N03LGATMA1 serves as the main switch or OR-ing FET on a 12V-30V distribution rail, leveraging its 50A continuous drain rating and 56W power dissipation to handle inrush transients during board insertion. The 30V VDS comfortably covers the worst-case 12V rail with inductive spike headroom, while the 2.5 C/W RthJC keeps the silicon well below thermal limits when the copper pad is sized to 1 sq inch or more. Compared with a Schottky diode OR-ing scheme, the IPD060N03L drops ~6 mOhm x I, recovering 5-10W per rail at 25A and noticeably improving telecom-shelf efficiency. The logic-level gate drive is also compatible with hot-swap controllers such as the LTC4215 family without level shifting.
Recommended
Low-Side Switch in BLDC Motor Drive
In three-phase BLDC motor drives up to ~3kW, the IPD060N03LGATMA1 is well suited to the low-side positions of a 6-MOSFET inverter powered from a 12V-24V battery bus. The 200A pulsed drain rating absorbs the motor's commutation transients without exceeding the SOA, while the 6 mOhm RDS(on) keeps I^2R conduction loss manageable at continuous 30A per phase. The exposed PG-TO252 tab enables direct chassis-mount heatsinking, and the logic-level Vth allows the part to be driven directly from gate-driver ICs such as the Infineon 6EDL04I or IR2101 without a bootstrap supply. Designers should still add a 100nF gate-source resistor and a TVS across the drain-source terminals to protect against motor kickback spikes that can exceed 30V.
Recommended
Battery Protection in 1S-3S Lithium-Ion Packs
For 1S-3S lithium-ion battery management, the IPD060N03LGATMA1 acts as the main discharge FET in a common-drain or common-source protection circuit. With a 30V VDS rating and 50A continuous drain current, it comfortably handles 3S packs (12.6V max) plus transient ringing from motor load or charger hot-plug. The 6 mOhm RDS(on) minimizes voltage drop during high-current discharge, preserving battery runtime, while the 21 nC Qg keeps the protection-circuit MOSFET driver losses negligible. The logic-level Vth is also key here - many low-power battery-protection ICs output only 3V gate drive, which fully enhances the IPD060N03L. The PG-TO252 footprint is compact enough for integration inside a 18650-pack protection module.
Recommended
Class-D Audio Amplifier Output Stage
Class-D audio amplifiers driving 4-ohm loads from a 12V-24V supply benefit from the IPD060N03LGATMA1's combination of low RDS(on) and very low output charge (Qoss), which together reduce crossover distortion and switching-node ringing. The part is rated for 200A pulsed drain current, more than enough for the ~30A peak currents demanded by 200W class-D amplifiers, and its 6 mOhm on-resistance keeps conduction loss below 5W per channel at full output. The logic-level Vth permits direct drive from gate-driver ICs commonly used in audio designs (e.g., IRS2092), removing the need for a charge pump. Designers should still observe the 30V VDS limit carefully - inductive speaker loads can easily produce 40V+ spikes that require a TVS clamp.
Recommended
High-Current USB-PD / Point-of-Load Buck
USB-Power-Delivery (PD) sinks at 20V and 5A demand a synchronous buck converter with very low loss on both the high-side and low-side switches. The IPD060N03LGATMA1 serves as the low-side synchronous rectifier in a 4-switch buck-boost or conventional buck topology, where its 6 mOhm RDS(on) and 21 nC Qg maximize efficiency at the 100W-240W USB-PD EPR power level. The 30V VDS gives ample margin against 20V PD transients and switching spikes, while the 50A continuous drain current easily supports 5A continuous output plus overload headroom. The logic-level Vth enables direct 5V PWM drive from controllers like the Infineon XDPS2221, eliminating a gate-driver stage and reducing BOM cost. Engineers should add input/output TVS protection for USB hot-plug events.
Recommended
Recommended Products Summary
Engineering reference data for IPD060N03LGATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD060N03LGBTMA1 | IPD090N03LGATMA1 | NTMFS4C029N | SiRA12DP |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Vishay Intertechnology |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| VDS max | 30 V | 30 V | 30 V | 30 V | 30 V |
| Continuous Drain Current (TC=25C) | 50 A | 50 A | 50 A | 46 A | 60 A |
| RDS(on) @ VGS=10V (typ) | 6.0 mOhm | 6.0 mOhm | 9.0 mOhm (+50%) | 4.0 mOhm (-33%) | 5.2 mOhm (-13%) |
| Total Gate Charge Qg (typ) | 21 nC | 21 nC | 18 nC | 29 nC | 26 nC |
| Gate Threshold Voltage (typ) | 1.7 V (logic-level) | 1.7 V | 1.7 V | 1.6 V | 2.0 V (standard-level) |
| Power Dissipation (TC=25C) | 56 W | 56 W | 50 W | 61 W | 54 W |
| Unit Price (qty 1, as of 2026-09-13) | $0.47 | $0.47 | $0.42 | $0.62 | $0.55 |
Key Differentiators
- Industry-leading FOM in PG-TO252 footprint (vs SiRA12DP (Vishay))
- Logic-level gate drive eliminates level-shift circuitry (vs IPD090N03LGATMA1 (Infineon, standard-level))
- Higher pulsed drain current rating (vs NTMFS4C029N (onsemi))
Design Notes
Estimated: at continuous 25A load with RDS(on)=6 mOhm, conduction loss is P=I^2 x R = 25^2 x 0.006 = 3.75W. Combined with ~0.5W switching loss at 500kHz, total dissipation is ~4.25W. The PG-TO252 package has RthJA of 62 C/W on a standard 1 sq inch copper pad, giving a junction temperature rise of ~263C above ambient - clearly infeasible. Therefore the part must be heatsunk or the copper pad expanded to >=2 sq inch (RthJA ~31 C/W), which drops the temperature rise to ~131C and keeps Tj within the 175C maximum. For >20A continuous operation, consider a forced-air airflow or a thermally enhanced PCB stack-up.
The exposed drain tab of the PG-TO252-3 package carries the full drain current and dissipates essentially all of the heat, so the PCB land pattern must use the IPC-7351 nominal footprint for DPAK with at least 100 thermal vias (0.3mm drill, 1.0mm pitch) under the tab to conduct heat to internal copper planes. Keep the high-current loop (drain-source of the FET, input/output capacitors) area under 0.5 sq cm to limit parasitic inductance and switching-node ringing. Place a 100nF gate-source resistor close to the gate pin to damp the gate-drive loop and prevent parasitic turn-on.
Do not exceed VGS=+/-20V even momentarily - the gate oxide of trench MOSFETs is thin and ESD-sensitive. Use a gate-source Zener clamp (e.g., 12V) if the gate drive can overshoot. The PG-TO252's exposed tab is the drain; floating or improperly soldering the tab will create a thermal hot spot and raise RthJA by 3-5x. Finally, verify that the chosen gate driver can source/sink at least 1A peak - the IPD060N03L's 21 nC Qg requires ~1A to switch in 20ns, which is faster than many low-current PWM controllers can deliver and will slow the switching edge.
In synchronous buck topologies, the IPD060N03LGATMA1's body-diode reverse recovery (Qrr) interacts with the high-side FET during dead-time, causing switching-node ringing and additional loss. The OptiMOS 30V platform is engineered with low Qrr, but designers should still add a 100V-rated RC snubber (e.g., 4.7 ohm + 1nF) across the drain-source terminals if ringing exceeds 10V peak. Keep the gate-drive trace below 10mm and use a 50 ohm microstrip if the gate driver is far from the FET, to prevent transmission-line reflections and overshoot.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q101 qualified - this is an industrial/consumer-grade part. For automotive designs, choose Infineon's -AEC variant or a qualified cross-brand part.
