IPD090N03LGATMA1 vs IAUZ30N06S5L140ATMA1 Comparison
Detailed side-by-side comparison of IPD090N03LGATMA1 by Infineon and IAUZ30N06S5L140ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ30N06S5L140ATMA1 - 60V 30A OptiMOS 5 N-MOSFET | Infineon
IAUZ30N06S5L140ATMA1 β ActiveSpecification Comparison
| Parameter | IPD090N03LGATMA1 | IAUZ30N06S5L140ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.34 | $0.96 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vdss) | 30 V | β |
| Continuous Drain Current (Id) @ Tc=25C | 40 A | β |
| Continuous Drain Current (Id) @ Tc=100C | [DATA_NEEDED: Id at 100C] | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed Id] | β |
| Maximum Power Dissipation (Pd) @ Tc=25C | 42 W | β |
| On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A | 9 mOhm (typical) | β |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | [DATA_NEEDED: Rds(on) at 4.5V] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | 12.2 nC @ VGS=10 V |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | 888 pF @ VDS=30 V |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | β |
| Operating Temperature Range | -55C to +175C (junction) | β |
| Package | PG-TO252-3-11 (DPAK) | PG-TSDSON-8-32 (S3O8, 3x3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | β |
| RoHS Status | Compliant | β |
| Technology Family | OptiMOS 30V | OptiMOS 5 |
| Configuration | Single | β |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID, Tc) | β | 30 A (Tj) |
| Power Dissipation (PD, Tc) | β | 33 W |
| RDS(on) Max @ VGS=10 V | β | 14 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | 2.2 V (typ) |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| Automotive Grade | β | AEC-Q101 qualified |
| Gate-Source Voltage Max | β | Β±20 V |
| Lead-Free / RoHS | β | Yes (RoHS compliant) |