IPD090N03LGATMA1 vs IAUZ30N06S5L140ATMA1 对比
详细并排对比 IPD090N03LGATMA1 出自 Infineon 和 IAUZ30N06S5L140ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD090N03LGATMA1 | IAUZ30N06S5L140ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.34 | $0.96 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ Tc=25C | 40 A | — |
| Continuous Drain Current (Id) @ Tc=100C | [DATA_NEEDED: Id at 100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed Id] | — |
| Maximum Power Dissipation (Pd) @ Tc=25C | 42 W | — |
| On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A | 9 mOhm (typical) | — |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | [DATA_NEEDED: Rds(on) at 4.5V] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | 12.2 nC @ VGS=10 V |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | 888 pF @ VDS=30 V |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| 工作温度范围 | -55C to +175C (junction) | — |
| 封装 | PG-TO252-3-11 (DPAK) | PG-TSDSON-8-32 (S3O8, 3x3 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 (unlimited) | — |
| RoHS 状态 | Compliant | — |
| Technology Family | OptiMOS 30V | OptiMOS 5 |
| Configuration | Single | — |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc) | — | 30 A (Tj) |
| Power Dissipation (PD, Tc) | — | 33 W |
| RDS(on) Max @ VGS=10 V | — | 14 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 2.2 V (typ) |
| 工作结温 | — | -55°C to +175°C |
| Automotive Grade | — | AEC-Q101 qualified |
| Gate-Source Voltage Max | — | ±20 V |
| Lead-Free / RoHS | — | Yes (RoHS compliant) |