IPD100N04S402ATMA1 vs IRF3205STRLPBF Comparison

Detailed side-by-side comparison of IPD100N04S402ATMA1 by Infineon and IRF3205STRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD100N04S402ATMA1 IPD100N04S402ATMA1 - 40V 100A Automotive N-MOSFET | Infineon

IPD100N04S402ATMA1 - 40V 100A Automotive N-MOSFET | Infineon

IPD100N04S402ATMA1 ✓ Active
Infineon
IRF3205STRLPBF IRF3205STRLPBF - 55V 110A N-Ch HEXFET MOSFET | Infineon

IRF3205STRLPBF - 55V 110A N-Ch HEXFET MOSFET | Infineon

IRF3205STRLPBF ✓ Active

Specification Comparison

Parameter IPD100N04S402ATMA1 IRF3205STRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.00 $1.02
Channel Type N-channel —
Operating Mode Enhancement mode —
Drain-Source Voltage 40 V —
Continuous Drain Current 100 A at Tc —
Power Dissipation 150 W at Tc —
On-Resistance 4.0 mΩ —
Configuration Single MOSFET with built-in diode —
Package PG-TO252-3-313 surface-mount DPAK TO-263-3 (D2PAK)
Pin Count 3 pins plus tab —
Automotive Qualification AEC-Q101 qualified —
Avalanche Testing 100% avalanche tested —
Minimum Operating Temperature -55°C —
Maximum Operating Temperature 175°C —
Peak Reflow Temperature 260°C —
Moisture Sensitivity Level MSL1 —
RoHS Status Compliant —
Mounting Type Surface mount Surface Mount
Package Body Material Plastic/epoxy —
JEDEC Package Code TO-252 —
Gate Charge [DATA_NEEDED: gate charge] —
Gate Threshold Voltage [DATA_NEEDED: gate threshold voltage] —
Reverse-Biased Safe Operating Area [DATA_NEEDED: SOA data] —
Polarity — N-Channel
MOSFET Operating Mode — Enhancement
Drain-Source Voltage (Vdss) — 55 V
Continuous Drain Current (Id) @ Tc=25°C — 110 A
Pulsed Drain Current (Idm) — 390 A
Static Drain-Source On-Resistance (Rds(on)) — 8 mΩ max @ Vgs=10V
Gate-Source Threshold Voltage (Vgs(th)) — 2.0 V to 4.0 V
Total Gate Charge (Qg) — 97.3 nC typical
Power Dissipation (Pd) @ Tc=25°C — 200 W
Operating Temperature Range — -55 °C to +175 °C (Tj)
Lead-Free / RoHS Status — Lead-Free / RoHS Compliant (PBF suffix)
Technology — HEXFET (advanced process)
Packaging — Tape & Reel (STRL)

Datasheets & Resources

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