IPD100N04S402ATMA1 vs IRF3205STRLPBF Vergleich
Detaillierter Direktvergleich von IPD100N04S402ATMA1 von Infineon und IRF3205STRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD100N04S402ATMA1 | IRF3205STRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $1,02 |
| Channel Type | N-channel | — |
| Operating Mode | Enhancement mode | — |
| Drain-Source Voltage | 40 V | — |
| Continuous Drain Current | 100 A at Tc | — |
| Power Dissipation | 150 W at Tc | — |
| On-Resistance | 4.0 mΩ | — |
| Configuration | Single MOSFET with built-in diode | — |
| Gehäuse | PG-TO252-3-313 surface-mount DPAK | TO-263-3 (D2PAK) |
| Pin-Anzahl | 3 pins plus tab | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Testing | 100% avalanche tested | — |
| Minimum Operating Temperature | -55°C | — |
| Maximum Operating Temperature | 175°C | — |
| Peak Reflow Temperature | 260°C | — |
| Moisture Sensitivity Level | MSL1 | — |
| RoHS-Status | Compliant | — |
| Montageart | Surface mount | Surface Mount |
| Package Body Material | Plastic/epoxy | — |
| JEDEC Package Code | TO-252 | — |
| Gate Charge | [DATA_NEEDED: gate charge] | — |
| Gate-Schwellenspannung | [DATA_NEEDED: gate threshold voltage] | — |
| Reverse-Biased Safe Operating Area | [DATA_NEEDED: SOA data] | — |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (Vdss) | — | 55 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 110 A |
| Pulsed Drain Current (Idm) | — | 390 A |
| Static Drain-Source On-Resistance (Rds(on)) | — | 8 mΩ max @ Vgs=10V |
| Gate-Source Threshold Voltage (Vgs(th)) | — | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | — | 97.3 nC typical |
| Power Dissipation (Pd) @ Tc=25°C | — | 200 W |
| Betriebstemperaturbereich | — | -55 °C to +175 °C (Tj) |
| Lead-Free / RoHS Status | — | Lead-Free / RoHS Compliant (PBF suffix) |
| Technology | — | HEXFET (advanced process) |
| Packaging | — | Tape & Reel (STRL) |