IPD100N04S402ATMA1 vs IRF3205STRLPBF Comparaison
Comparaison détaillée côte à côte de IPD100N04S402ATMA1 par Infineon et IRF3205STRLPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPD100N04S402ATMA1 | IRF3205STRLPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $1,02 |
| Channel Type | N-channel | — |
| Operating Mode | Enhancement mode | — |
| Drain-Source Voltage | 40 V | — |
| Continuous Drain Current | 100 A at Tc | — |
| Power Dissipation | 150 W at Tc | — |
| On-Resistance | 4.0 mΩ | — |
| Configuration | Single MOSFET with built-in diode | — |
| Boîtier | PG-TO252-3-313 surface-mount DPAK | TO-263-3 (D2PAK) |
| Nombre de broches | 3 pins plus tab | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Testing | 100% avalanche tested | — |
| Minimum Operating Temperature | -55°C | — |
| Maximum Operating Temperature | 175°C | — |
| Peak Reflow Temperature | 260°C | — |
| Moisture Sensitivity Level | MSL1 | — |
| Statut RoHS | Compliant | — |
| Type de montage | Surface mount | Surface Mount |
| Package Body Material | Plastic/epoxy | — |
| JEDEC Package Code | TO-252 | — |
| Gate Charge | [DATA_NEEDED: gate charge] | — |
| Tension de seuil de grille | [DATA_NEEDED: gate threshold voltage] | — |
| Reverse-Biased Safe Operating Area | [DATA_NEEDED: SOA data] | — |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (Vdss) | — | 55 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 110 A |
| Pulsed Drain Current (Idm) | — | 390 A |
| Static Drain-Source On-Resistance (Rds(on)) | — | 8 mΩ max @ Vgs=10V |
| Gate-Source Threshold Voltage (Vgs(th)) | — | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | — | 97.3 nC typical |
| Power Dissipation (Pd) @ Tc=25°C | — | 200 W |
| Plage de température de fonctionnement | — | -55 °C to +175 °C (Tj) |
| Lead-Free / RoHS Status | — | Lead-Free / RoHS Compliant (PBF suffix) |
| Technology | — | HEXFET (advanced process) |
| Packaging | — | Tape & Reel (STRL) |