IPD100N04S402ATMA1 vs IRF3205STRLPBF Comparação
Comparação detalhada lado a lado de IPD100N04S402ATMA1 por Infineon e IRF3205STRLPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IPD100N04S402ATMA1 | IRF3205STRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,00 | $1,02 |
| Channel Type | N-channel | — |
| Operating Mode | Enhancement mode | — |
| Drain-Source Voltage | 40 V | — |
| Continuous Drain Current | 100 A at Tc | — |
| Power Dissipation | 150 W at Tc | — |
| On-Resistance | 4.0 mΩ | — |
| Configuration | Single MOSFET with built-in diode | — |
| Encapsulamento | PG-TO252-3-313 surface-mount DPAK | TO-263-3 (D2PAK) |
| Contagem de pinos | 3 pins plus tab | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Testing | 100% avalanche tested | — |
| Minimum Operating Temperature | -55°C | — |
| Maximum Operating Temperature | 175°C | — |
| Peak Reflow Temperature | 260°C | — |
| Moisture Sensitivity Level | MSL1 | — |
| Status RoHS | Compliant | — |
| Tipo de montagem | Surface mount | Surface Mount |
| Package Body Material | Plastic/epoxy | — |
| JEDEC Package Code | TO-252 | — |
| Gate Charge | [DATA_NEEDED: gate charge] | — |
| Tensão de limiar de gate | [DATA_NEEDED: gate threshold voltage] | — |
| Reverse-Biased Safe Operating Area | [DATA_NEEDED: SOA data] | — |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (Vdss) | — | 55 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 110 A |
| Pulsed Drain Current (Idm) | — | 390 A |
| Static Drain-Source On-Resistance (Rds(on)) | — | 8 mΩ max @ Vgs=10V |
| Gate-Source Threshold Voltage (Vgs(th)) | — | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | — | 97.3 nC typical |
| Power Dissipation (Pd) @ Tc=25°C | — | 200 W |
| Faixa de temperatura de operação | — | -55 °C to +175 °C (Tj) |
| Lead-Free / RoHS Status | — | Lead-Free / RoHS Compliant (PBF suffix) |
| Technology | — | HEXFET (advanced process) |
| Packaging | — | Tape & Reel (STRL) |