IPD11DP10NMATMA1 - 100V P-Ch OptiMOS MOSFET | Infineon
MPN: IPD11DP10NMATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.22 | $1.22 |
| 10 | $1.1 | $11.00 |
| 100 | $0.95 | $95.00 |
| 500 | $0.82 | $410.00 |
| 1,000 | $0.71 | $710.00 |
| 3,000 | $0.62 | $1,860.00 |
IPD11DP10NMATMA1 Overview
A P-channel MOSFET is a type of field-effect transistor in which the conducting channel is formed by majority-carrier holes. In circuit hierarchy it sits within discrete semiconductors > transistors > MOSFETs > power MOSFETs. P-channel devices are commonly used for high-side switching because they can be driven without a charge pump or bootstrap circuit, simplifying gate drive design in low- to medium-voltage applications such as load switching, reverse polarity protection, and battery management. OptiMOS™ is Infineon's proprietary trench MOSFET process family that targets low RDS(on), low gate charge, and high switching efficiency.
Key features of the IPD11DP10NMATMA1 include a -100 V maximum drain-source voltage, 111 mΩ maximum RDS(on) at VGS = 10 V, a typical gate threshold of 4 V at 1.7 mA, total gate charge of 74 nC at 10 V VGS, and input capacitance of 230 pF with output capacitance of 63 pF. The device is rated for an operating junction temperature of -55 °C to +175 °C, making it suitable for harsh-environment designs. The PG-TO252-3 footprint is the industry-standard DPAK outline, providing a low-profile surface-mount option with a thermal tab for PCB copper heatsinking.
The trench-based OptiMOS cell structure achieves a low figure-of-merit (FOM = RDS(on) × QG) that reduces both conduction and switching losses. Compared to older planar P-channel generations, the IPD11DP10NMATMA1 typically offers lower gate charge, faster switching, and better avalanche ruggedness. The device is qualified for industrial-grade temperature ranges, supports avalanche operation, and is RoHS compliant.
Typical applications include high-side load switching in 48 V telecom and industrial bus systems, DC fan and motor control, battery protection and reverse polarity blocking in battery-powered equipment, hot-swap controllers, and power OR-ing in redundant supplies. The P-channel architecture is particularly attractive where the load sits at the low side of the supply and a simple high-side switch is required.
When designing with this device, ensure the gate-source voltage is held within the absolute maximum ratings (typically ±20 V) and provide sufficient gate-source pull-down resistance to prevent unintended turn-on during transients. Use a low-impedance gate drive and minimize the source inductance to limit ringing. The DPAK tab should be soldered to a sufficient copper pour area to keep the junction temperature within safe limits under worst-case load.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet. Information herein was verified against the Infineon product page, the DigiKey and Mouser listings, and the LCSC datasheet PDF as of 2026-09-15.
Drop-in alternatives for IPD11DP10NMATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPD11DP10NMATMA1 (same form factor and footprint) — differing in Technology, Drain-Source Voltage (VDS), Gate Threshold Voltage (VGS(th)), Operating Junction Temperature, Package.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD12DP10NM
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPD90P03P4L-04
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPD50N06S409ATMA2
✅ Drop-In✓ In Stock
$0.49 / Unit
View Datasheet →BSC076N04NDATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →IPD11DP10NMATMA1 Maximum Ratings & Electrical Characteristics
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -100 V |
| Continuous Drain Current (Ta) | 3.4 A |
| Continuous Drain Current (Tc) | 22 A |
| Power Dissipation (Ta) | 3 W |
| Power Dissipation (Tc) | 125 W |
| On-Resistance RDS(on) max at VGS=10V | 111 mΩ |
| On-Resistance RDS(on) at ID=18A, VGS=10V | 111 mΩ |
| Gate Threshold Voltage (VGS(th)) | 4 V (typ at 1.7 mA) |
| Total Gate Charge (Qg) at VGS=10V | 74 nC |
| Input Capacitance (Ciss) | 230 pF |
| Output Capacitance (Coss) | 63 pF |
| Operating Temperature Range | -55 °C to +175 °C |
| Package | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount |
| Technology | OptiMOS™ Trench |
| RoHS Status | Compliant |
IPD11DP10NMATMA1 Pin Configuration
| Pin 1 | GATE — Gate control input; drive 0 V to -10 V relative to source for P-channel operation |
| Pin 2 | DRAIN — Drain terminal; electrically connected to the metal tab on the back of the package |
| Pin 3 | SOURCE — Source terminal; connect to the higher-voltage rail in a P-channel high-side switch |
Safe Operating Area (DC)
Typical Applications
IPD11DP10NMATMA1 is suitable for 6 applications: High-Side Load Switching in 48 V Telecom Systems, Reverse Polarity Protection in Battery-Powered Equipment, DC Fan and Small Motor Control, Power OR-ing in Redundant Supplies, Hot-Swap and Inrush Limiting, Solar Charge Controller and Energy Harvesting.
High-Side Load Switching in 48 V Telecom Systems
The IPD11DP10NMATMA1 is well suited as a high-side P-channel load switch in -48 V telecom and industrial bus distribution. Its P-channel architecture eliminates the need for a bootstrap or charge-pump gate drive; the gate only needs to be pulled to ground (or one VGS below source) to enable conduction. The 100 V VDS rating provides a comfortable 2× derating margin over a 48 V nominal rail and covers -75 V transients per Telcordia GR-1089. The 111 mΩ RDS(on) at VGS = 10 V keeps full-load conduction loss around 0.5 W at 2 A, and the 4 V typical VGS(th) allows direct drive from a 5 V GPIO. Recommended companion: Infineon BCR402U for LED indicator, BTS51202EKAXUMA1 for secondary high-side channels.
Recommended
Reverse Polarity Protection in Battery-Powered Equipment
The IPD11DP10NMATMA1 serves as a low-loss reverse-polarity protection (RPP) element in 12 V, 24 V, and 36 V battery systems. Wired with source to the battery and drain to the load, the device conducts during normal polarity (gate grounded through a pull-down resistor) and blocks current if the battery is reversed. The P-channel configuration offers 2×-3× lower conduction loss than a Schottky diode at moderate currents, while the 100 V VDS handles automotive load-dump transients up to 60 V. RDS(on) of 111 mΩ at full VGS adds only ~22 mV of drop per amp, well within tight USB-PD voltage-tolerance budgets. Recommended companion: A microcontroller GPIO with a 10 kΩ gate pull-down.
Recommended
DC Fan and Small Motor Control
The IPD11DP10NMATMA1 works as a low-side or high-side switch for 12 V / 24 V brushless DC fans and small DC motors in industrial and appliance applications. At 24 V VDS, the 100 V rating gives a 4× safety margin over the supply rail. The 22 A continuous drain rating (at TC, with proper PCB copper) easily handles inrush currents of 5-10 A during fan startup. The 74 nC total gate charge at 10 V VGS allows PWM switching up to 25 kHz with a small gate-drive transistor. The 4 V typical VGS(th) means a 3.3 V MCU can directly drive the gate when the motor is on the low side, and a simple totem-pole driver suffices for high-side PWM. Recommended companion: IR2109SPBF for half-bridge driver.
Recommended
Power OR-ing in Redundant Supplies
The IPD11DP10NMATMA1 is appropriate for low-current power OR-ing in 24 V and 48 V redundant power systems, where two supplies feed a common load through individual MOSFETs. As a P-channel device with source at the supply, the body diode conducts if the supply is on; pulling the gate to ground turns the MOSFET on for the lowest-loss path. The 111 mΩ RDS(on) yields 0.5 W of dissipation at 2 A, far lower than a Schottky OR-ing diode. The 100 V VDS handles supply transients. The 175 °C maximum junction temperature provides ample thermal margin in a small DPAK footprint. Recommended companion: A controller such as LM74700-Q1 for fast OR-ing switching, or a discrete comparator for low-cost designs.
Recommended
Hot-Swap and Inrush Limiting
The IPD11DP10NMATMA1 can be used for inrush-current limiting on plug-in cards and modules at voltages up to 60 V. With the P-channel source on the backplane side and drain on the card side, a simple RC network on the gate provides a soft-start ramp. The 74 nC total gate charge at 10 V VGS determines the ramp time constant with a 1 µF gate capacitor, giving roughly 7 ms of soft-start. The 4 V typical VGS(th) provides predictable turn-on. At 60 V and 5 A continuous the 125 W (Tc) dissipation rating is sufficient, and the 100 V VDS gives a 1.6× safety margin. Recommended companion: An MCU with a GPIO to enable/disable the gate, plus a TVS for transient suppression.
Recommended
Solar Charge Controller and Energy Harvesting
The IPD11DP10NMATMA1 can be used as a blocking or load-disconnect MOSFET in small 12 V / 24 V solar charge controllers and energy-harvesting modules. In a P-channel load-disconnect topology, the source is at the battery, the drain at the load, and the gate is driven by a comparator to disconnect the load at low battery voltage. The 100 V VDS handles open-circuit solar panel voltages up to 60 V (12 V panel) and 90 V (24 V panel). RDS(on) of 111 mΩ at 10 V VGS keeps conduction loss manageable. The 4 V typical VGS(th) allows direct drive from common solar-charge-controller ICs operating at 5 V. Recommended companion: 1EDN7116GXTMA1 as a low-side gate driver for synchronous control.
Recommended
Recommended Products Summary
Engineering reference data for IPD11DP10NMATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD12DP10NM | IPD90P03P4L-04 | IPD50N06S409ATMA2 | BSC076N04NDATMA1 |
|---|---|---|---|---|---|
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Polarity | P-Channel | P-Channel | P-Channel | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | -100 V | -100 V | -30 V | 60 V | 40 V |
| Operating Temperature Range | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C |
| RoHS Status | Compliant | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- OptiMOS trench technology for low RDS(on) × QG figure of merit (vs IPD50N06S409ATMA2 (Infineon N-channel))
- Industry-standard PG-TO252-3 (DPAK) footprint shared with N-channel and lower-voltage parts (vs BSC076N04NDATMA1 (Infineon 40 V N-channel))
- 100 V VDS with 4 V typical VGS(th) for direct 5 V/12 V logic drive (vs IRF9530NPBF (Infineon legacy planar P-channel))
Design Notes
At full 22 A load (Tc), the IPD11DP10NMATMA1 can dissipate 125 W into a properly heatsunk case, but in free air (TA) the device is limited to 3 W due to the PG-TO252-3 thermal resistance. To approach the full 22 A rating, the exposed drain tab must be soldered to a minimum of 1 square inch of 2 oz copper on a multi-layer PCB. Without a copper pour, derate the continuous current to 3-4 A. Place a thermal via array under the tab per Infineon application note AN-2015-02.
Follow the IPC-7351 DPAK land pattern. The drain pad (pin 2 and tab) should be the largest copper pour, ideally on the top layer, with at least four thermal vias to internal copper planes. Keep the gate trace short and direct, and place the gate pull-down resistor within 5 mm of the gate pin. The source pin (pin 3) should connect to a low-impedance ground/return plane. Avoid routing noisy high-di/dt traces under the drain tab to minimize coupling.
Do not exceed VGS of ±20 V. The 4 V typical VGS(th) is well below 10 V, but overdrive the gate at 12 V to push RDS(on) into its minimum rating. For P-channel high-side switching, never let the gate voltage exceed the source voltage; a missing gate pull-down resistor is a common failure mode that leaves the device in a partially-on state and causes thermal runaway. Add a 10 kΩ to 100 kΩ pull-down from gate to source to guarantee off-state.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this is the industrial-grade version; for automotive P-channel DPAK consider the IPD90P03P4L-04-Q1 family or contact Infineon for automotive-grade cross-reference.
