IPD11DP10NMATMA1 vs BSC076N04NDATMA1 比較
詳細並排比較 IPD11DP10NMATMA1 由 Infineon 與 BSC076N04NDATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD11DP10NMATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (Ta) | 3.4 A | — |
| Continuous Drain Current (Tc) | 22 A | — |
| Power Dissipation (Ta) | 3 W | 2.3 W |
| Power Dissipation (Tc) | 125 W | 65 W |
| On-Resistance RDS(on) max at VGS=10V | 111 mΩ | — |
| On-Resistance RDS(on) at ID=18A, VGS=10V | 111 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 4 V (typ at 1.7 mA) | 4 V (max, typical) |
| Total Gate Charge (Qg) at VGS=10V | 74 nC | — |
| Input Capacitance (Ciss) | 230 pF | — |
| Output Capacitance (Coss) | 63 pF | — |
| 工作溫度範圍 | -55 °C to +175 °C | — |
| 封裝 | PG-TO252-3 (DPAK) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS™ Trench | Trench MOSFET (OptiMOS 3) |
| RoHS 狀態 | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| 工作接面溫度 | — | -55 C to +175 C |
| 封裝 / 外殼 | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |