IPD35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
MPN: IPD35N10S3L26ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.92 | $920.00 |
| 2,500 | $0.81 | $2,025.00 |
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View Datasheet →IPD35N10S3L26ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IPD35N10S3L26ATMA1 |
| Technology | OptiMOS-T (N-channel enhancement mode trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC=25°C | 35 A |
| Pulsed Drain Current (IDM) | 180 A |
| On-Resistance RDS(on) max at VGS=10 V | 26 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | 1.7 V |
| Continuous Power Dissipation (PD) at TC=25°C | 71 W |
| Operating Junction Temperature | -55°C to +175°C |
| Package | PG-TO252-3-11 (DPAK-2) |
| Mounting Type | Surface Mount |
| MSL Level | MSL1 (up to 260°C peak reflow) |
| Automotive Qualification | AEC-Q101 qualified |
| Avalanche Tested | 100% avalanche tested |
| RoHS / Halogen-Free | RoHS compliant, Green product (halogen-free) |
IPD35N10S3L26ATMA1 Pin Configuration
| Pin 1 | Gate (G) — Gate drive input; controls drain-source conduction. Standard logic-level or 10V VGS drive. |
| Pin 2 | Drain (D) — Drain terminal; internally connected to the metal tab on the backside of the package. |
| Pin 3 | Source (S) — Source terminal; reference for gate drive and main current return path. |
Safe Operating Area (DC)
Typical Applications
IPD35N10S3L26ATMA1 is suitable for 6 applications: 48V Mild-Hybrid DC-DC Converter, Electric Power Steering (EPS) Motor Drive, Automotive Braking System (ABS/ESC) Solenoid Driver, Industrial Synchronous Rectification (24-48V SMPS), Battery Management System (BMS) Protection Switch, Motor Control H-Bridge (Industrial/Automotive Auxiliary).
48V Mild-Hybrid DC-DC Converter
The IPD35N10S3L26ATMA1 is well-suited for the synchronous rectifier position in 48V-to-12V or 48V-to-24V automotive DC-DC converters used in mild-hybrid electric vehicles. Its 100 V VDS rating provides safe headroom above the 48 V nominal bus (with transient peaks to ~70 V), while the 26 mΩ max RDS(on) at VGS=10 V keeps full-load conduction losses under 30 W at 35 A, manageable without aggressive thermal management. The 180 A pulsed avalanche rating also gives robust tolerance to the inductive kick during switch-node voltage transients. Pair with an Infineon EiceDRIVER gate driver and place the DPAK tab on a 1-square-inch copper pour for typical 50-100 W converter designs.
Recommended
Electric Power Steering (EPS) Motor Drive
In EPS systems the IPD35N10S3L26ATMA1 serves as the low-side switch in the H-bridge driving the steering assist motor. With 35 A continuous drain current and 180 A pulsed avalanche capability, the MOSFET handles the high inrush currents typical when the steering rack transitions from static friction. The AEC-Q101 qualification ensures reliability under hood thermal stress (-40°C to +175°C), and the 100% avalanche-tested rating supports the repetitive freewheeling events during PWM commutation. Low Qg reduces driver-stage losses, allowing smaller gate drivers and lower standby power. The PG-TO252-3-11 footprint is compatible with most automotive ECU PCB reference designs.
Recommended
Automotive Braking System (ABS/ESC) Solenoid Driver
The IPD35N10S3L26ATMA1 is qualified for ABS and electronic stability control (ESC) solenoid valve drivers where 100% avalanche-tested ruggedness is essential. Each ABS cycle forces the MOSFET to absorb the solenoid's inductive kickback energy; the device's 175°C maximum junction temperature and 180 A pulsed avalanche current rating make it tolerant of these repetitive events. The 26 mΩ RDS(on) limits steady-state heating of the brake-hydraulic module, while MSL1 reflow compatibility supports standard lead-free automotive PCB assembly. The DPAK-2 footprint allows direct PCB reuse across vehicle platforms.
Recommended
Industrial Synchronous Rectification (24-48V SMPS)
For industrial 24 V or 48 V switched-mode power supplies operating as secondary-side synchronous rectifiers, the IPD35N10S3L26ATMA1 provides a cost-effective solution with 100 V VDS margin and 26 mΩ RDS(on). The OptiMOS-T trench process delivers faster body-diode reverse recovery than planar MOSFETs, reducing dead-time losses in LLC and forward converters. At 100 kHz switching frequency, total losses are typically 60% lower than equivalent planar MOSFETs, enabling fanless designs up to ~300 W output. AEC-Q101 over-qualification also satisfies industrial reliability requirements.
Recommended
Battery Management System (BMS) Protection Switch
In 48 V lithium-ion battery management systems, the IPD35N10S3L26ATMA1 functions as the high-current pack protection disconnect switch. Its 100 V VDS comfortably handles the 48 V stack voltage plus transient overshoot during contactor opening, while the 35 A continuous current rating supports pack discharge currents in mild-hybrid applications. The 100% avalanche rating and 175°C junction temperature give long-term reliability under repeated short-circuit test conditions per ISO 26262 functional-safety requirements. The low 1.7 V VGS(th) simplifies low-side drive from BMS ASICs.
Recommended
Motor Control H-Bridge (Industrial/Automotive Auxiliary)
The IPD35N10S3L26ATMA1 is widely used as the low-side switch in H-bridge motor drives for auxiliary automotive loads (HVAC blower, water pump, oil pump) and industrial DC brushless motor drives. Its 26 mΩ RDS(on) and 35 A continuous ID handle motor inrush currents up to 180 A pulsed without derating, while the OptiMOS-T process provides fast switching for PWM frequencies up to 100 kHz. The DPAK-2 footprint allows direct PCB compatibility with virtually all major MOSFET vendors, simplifying second-source qualification. The 100 V VDS provides margin for 48 V bus applications with inductive kickback clamping by the MOSFET's avalanche rating.
Recommended
Recommended Products Summary
Engineering reference data for IPD35N10S3L26ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD30N10S3L34ATMA1 | IPD30N10S3L34ATMA2 | IPD30N08S2L21ATMA1 | IPD30N06S2L13ATMA4 | BSC050N03LSGATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TDSON-8 (different) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 80 V | 60 V | 30 V |
| Continuous Drain Current (ID @ TC=25°C) | 35 A | 30 A | 30 A | 30 A | 30 A | 50 A |
| On-Resistance RDS(on) max @ VGS=10V | 26 mΩ | 34 mΩ | 34 mΩ | 21 mΩ | 13 mΩ | 5 mΩ |
| Technology Family | OptiMOS-T | OptiMOS-T | OptiMOS-T | OptiMOS-2 | OptiMOS-2 | OptiMOS-3 |
| Automotive Qualification (AEC-Q101) | Qualified | Qualified | Qualified | Qualified | Qualified | Qualified |
| Operating Junction Temperature | 175°C max | 175°C max | 175°C max | 175°C max | 175°C max | 150°C max |
| Continuous Power Dissipation (TC=25°C) | 71 W | 71 W | 71 W | 71 W | 71 W | 57 W |
Key Differentiators
- Highest continuous current in OptiMOS-T 100V DPAK family (vs IPD30N10S3L34ATMA1)
- OptiMOS-T trench technology vs older planar processes (vs Generic 100V planar N-MOSFET)
- AEC-Q101 + 100% avalanche + 175°C Tj (vs Industrial-grade 100V MOSFETs)
Design Notes
Estimated: at 25 A continuous load and 100% duty, conduction loss is I² × RDS(on) = 25² × 0.026 = 16.25 W. The PG-TO252-3-11 (DPAK) thermal resistance on a 1-square-inch 2-oz copper pour is typically θJA ≈ 50°C/W, giving a junction temperature rise of ~813°C above ambient - clearly exceeding safe limits. For continuous operation at 25 A, expand the copper pour to 4+ square inches, or use a small clip-on heatsink. Always verify SOA on the datasheet's thermal-impedance curve rather than relying solely on the DC rating.
The PG-TO252-3-11 exposed tab is the drain terminal and must be soldered to a top-side copper pour with multiple thermal vias (typically 4-9 vias in a 3x3 grid, 0.3mm drill, 1mm pitch) to inner-plane copper for double-sided heat extraction. Place the gate-drive return (Kelvin source) directly at pin 3 with a short, low-inductance trace to the driver IC ground. Avoid running high-current drain traces under the gate loop to minimize dv/dt-induced gate-drive ringing. Keep the gate-trace impedance below ~5 nH for clean switching at 100 kHz.
Three common pitfalls when designing with the IPD35N10S3L26ATMA1: (1) Driving the gate from a logic-level 3.3V source instead of 10V VGS - this nearly doubles RDS(on) and dramatically increases losses. Always use a dedicated gate driver with 10V drive. (2) Ignoring avalanche energy during inductive load switching - although the part is 100% avalanche tested, repetitive avalanche operation above the SOA curve derates long-term reliability. (3) Exceeding MSL1 floor-life - although the part is MSL1 (unlimited floor life at ≤30°C/85%RH), verify JEDEC J-STD-033 handling if the part is ever rerolled or transferred.
Switch-node dv/dt on the IPD35N10S3L26ATMA1 can exceed 5 kV/μs in hard-switched topologies, which may couple back through the gate-drain capacitance (Cgd, typically a few hundred pF) and cause parasitic turn-on of the complementary high-side device in a half-bridge. Add a 10 kΩ gate-source resistor on the off-state device and consider a small ferrite bead or 1-2 Ω gate-damping resistor to suppress ringing. The Infineon application note 'OptiMOS-T Half-Bridge Layout' (if available) provides reference PCB layouts and gate-drive damping networks.
Compliance Information
AEC-Q101 (automotive) qualified per Infineon datasheet. RoHS compliant, Green product (halogen-free) per Infineon product page. MSL1 rated for up to 260°C peak reflow soldering.
