IPD50N03S4L06ATMA1 vs IPG20N04S4L07ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD50N03S4L06ATMA1 sa pamamagitan ng Infineon at IPG20N04S4L07ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPG20N04S4L07ATMA1 - 40V 20A Dual N-Ch MOSFET 7.2mΩ | Infineon
IPG20N04S4L07ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD50N03S4L06ATMA1 | IPG20N04S4L07ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel, Enhancement Mode | 2x N-Channel (Dual, Independent) |
| Drain-Source Voltage (V_DS) | 30 V | — |
| Continuous Drain Current (I_D, Tc) | 50 A | — |
| On-State Resistance (R_DS(on) max) | 5.5 mOhm at V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th) typ) | 2.2 V | — |
| Total Gate Charge (Q_g) | 31 nC at V_GS = 10 V | — |
| Input Capacitance (C_iss) | 2.33 nF | — |
| Output Capacitance (C_oss) | 600 pF | — |
| Reverse Transfer Capacitance (C_rss) | 34 pF | — |
| Power Dissipation (P_D) | 56 W at Tc = 25 C | — |
| Temperature ng Junction na Operasyon | -55 C to +175 C | -55°C to +175°C |
| Packhaging | PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount | PG-TDSON-8-4 (TDSON-8-4) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (up to 260 C peak reflow) | MSL1 (per JEDEC J-STD-020, 260°C peak reflow) |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Rating | 100% Avalanche Tested | — |
| Tindminan RoHS | Compliant (Green Package) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS™ T2 |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A |
| RDS(on) Max @ VGS=10V | — | 7.2 mΩ (typical) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge at VGS=10V] |
| Power Dissipation (PD) Max | — | 65 W |
| Logic-Level Gate Drive | — | Yes (4.5V VGS fully enhanced) |
| AEC-Q101 Qualification | — | Qualified |
| Avalanche Tested | — | 100% (per datasheet) |
| RoHS / Lead-Free | — | RoHS compliant, lead-free terminations |