IPD50N10S3L16ATMA1 vs IPC50N04S5L5R5ATMA1 Comparison

Detailed side-by-side comparison of IPD50N10S3L16ATMA1 by Infineon and IPC50N04S5L5R5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD50N10S3L16ATMA1 IPC50N04S5L5R5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Part Number IPD50N10S3L16ATMA1 —
Series OptiMOS-T —
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (V_DS) 100 V —
Continuous Drain Current (I_D, T_C=25C) 50 A —
Pulsed Drain Current (I_DM) 200 A —
R_DS(on) max @ V_GS=10V 15 mΩ —
Gate Threshold Voltage (V_GS(th)) 2.5 V (typ) —
Power Dissipation (P_D, T_C=25C) 100 W —
Package PG-TO252-3-11 (DPAK) PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C -55 °C to +175 °C
Automotive Qualification AEC-Q101 —
RoHS Status Compliant —
Packaging Tape & Reel —
Mode — Enhancement Mode
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc) — 50 A
Maximum Drain Current (silicon-limited, 25 °C) — 60 A
On-Resistance RDS(on) max @ VGS=10 V — 5.5 mΩ
Gate Threshold VGS(th) — Logic Level (enhancement at ≤ 4.5 V VGS)
Power Dissipation (Tc) — 42 W
Thermal Resistance Junction-to-Case RthJC — 3.6 K/W
AEC-Q101 Qualification — Qualified (automotive grade)
MSL (Moisture Sensitivity Level) — MSL1
Peak Reflow Temperature — 260 °C
Avalanche Rating — 100 % Avalanche Tested
RoHS / REACH — RoHS Compliant (Green Product)

Datasheets & Resources

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