IPD50N10S3L16ATMA2 vs IPD50N06S409ATMA2 Comparison
Detailed side-by-side comparison of IPD50N10S3L16ATMA2 by Infineon and IPD50N06S409ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD50N10S3L16ATMA2 - 100V 50A 15mΩ N-Ch OptiMOS-T MOSFET | Infineon
IPD50N10S3L16ATMA2 ✓ Active
Specification Comparison
| Parameter | IPD50N10S3L16ATMA2 | IPD50N06S409ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS-T | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) at Tc=25°C | 50 A | — |
| Pulsed Drain Current (IDM) | 180 A | — |
| Maximum R_DS(on) at VGS=10V | 15 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical] |
| Total Power Dissipation (Ptot) at Tc=25°C | 100 W | — |
| Operating Temperature Range | -55 °C to +175 °C (junction) | — |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (2 + Tab) | 3 (2 + Tab) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | — |
| Delivery Form | Tape and Reel (T&R) | — |
| Technology | — | N-Channel MOSFET (OptiMOS) |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| Operating Junction Temperature | — | -55 °C to +175 °C |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |