IPD50N10S3L16ATMA2 vs IPD50N06S409ATMA2 Comparison

Detailed side-by-side comparison of IPD50N10S3L16ATMA2 by Infineon and IPD50N06S409ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD50N10S3L16ATMA2 IPD50N06S409ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.96 $0.49
Manufacturer Infineon Technologies β€”
Series OptiMOS-T β€”
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID) at Tc=25Β°C 50 A β€”
Pulsed Drain Current (IDM) 180 A β€”
Maximum R_DS(on) at VGS=10V 15 mΞ© β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th) typical]
Total Power Dissipation (Ptot) at Tc=25Β°C 100 W β€”
Operating Temperature Range -55 Β°C to +175 Β°C (junction) β€”
Package PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (2 + Tab) 3 (2 + Tab)
Automotive Qualification AEC-Q101 qualified AEC-Q101
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) β€”
Delivery Form Tape and Reel (T&R) β€”
Technology β€” N-Channel MOSFET (OptiMOS)
Continuous Drain Current (ID) at Tc β€” 50 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V β€” 9 mΞ©
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc β€” 71 W
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
Lead-Free / Halogen-Free β€” [DATA_NEEDED]

Datasheets & Resources

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