IPD50N10S3L16ATMA2 - 100V 50A 15mΩ N-Ch OptiMOS-T MOSFET | Infineon
MPN: IPD50N10S3L16ATMA2 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.21 | $605.00 |
| 1,000 | $1.07 | $1,070.00 |
| 2,500 | $0.96 | $2,400.00 |
IPD50N10S3L16ATMA2 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device that uses an isolated gate to modulate the conductivity of a semiconductor channel between the drain and source terminals. MOSFETs sit in the broader power-semiconductor taxonomy alongside IGBTs and thyristors and are the dominant switching element in DC-DC converters, motor drives, and load switches below 600 V. The OptiMOS-T family from Infineon is optimized for low on-state resistance per unit silicon area, which directly reduces conduction loss and improves overall system efficiency.
Key features of this device include a 100 V VDS rating that comfortably supports 48 V automotive bus systems (including load-dump transients), a maximum R_DS(on) of 15 mΩ at VGS = 10 V, and a typical continuous drain current of 50 A at Tc = 25 °C. The DPAK (TO-252) package provides a low thermal resistance path through the tab to the PCB copper, while the automotive qualification (AEC-Q101) makes the part suitable for under-hood and chassis electronics. An integrated gate-protection Zener (implied by the S3L designation family) improves ESD robustness.
In architecture terms, the device uses Infineon's trench-cell OptiMOS-T technology, which shrinks the cell pitch versus planar MOSFETs to lower R_DS(on) * A figure of merit. This results in lower conduction loss per switching cycle, allowing designers to either shrink heatsink size or push switching frequency higher in SMPS designs.
Typical applications include 48 V automotive load switches, DC-DC converters, motor control H-bridges, reverse-polarity protection, and high-current solenoid drivers. The part is also widely used in industrial relay replacement, battery management, and synchronous rectification.
When designing with this device, ensure the gate-source drive voltage is firmly above 10 V (VGS(th) typically 2.5 V) to reach the datasheet R_DS(on) figure, and respect the SOA envelope at high VDS and low duty cycles. Always check avalanche energy rating (EAS) when driving inductive loads.
This page synthesizes distributor pricing, AEC-Q101 qualification notes, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for IPD50N10S3L16ATMA2 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPD50N10S3L16ATMA2 (same form factor and footprint) — differing in Operating Temperature Range, Package, Automotive Qualification, Series, Drain-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD50N10S3L16ATMA1
✅ Drop-In✓ In Stock
$0.89 / Unit
View Datasheet →IPD50N06S409ATMA2
✅ Drop-In✓ In Stock
$0.49 / Unit
View Datasheet →IPD65R380E6ATMA1
✅ Drop-In✓ In Stock
$0.65 / Unit
View Datasheet →IPD50N10S3L16ATMA2 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS-T |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Tc=25°C | 50 A |
| Pulsed Drain Current (IDM) | 180 A |
| Maximum R_DS(on) at VGS=10V | 15 mΩ |
| Total Power Dissipation (Ptot) at Tc=25°C | 100 W |
| Operating Temperature Range | -55 °C to +175 °C (junction) |
| Package | PG-TO252-3-11 (DPAK) |
| Mounting Type | Surface Mount |
| Pin Count | 3 (2 + Tab) |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Status | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) |
| Delivery Form | Tape and Reel (T&R) |
IPD50N10S3L16ATMA2 Pin Configuration
| Pin 1 | Gate (G) — Gate drive input; controls drain-source conduction |
| Pin 2 | Drain (D) — Drain terminal (also connected to tab) |
| Pin 3 | Source (S) — Source terminal (return path) |
| Pin TAB | Drain (TAB) — Metal tab electrically connected to drain; provides thermal path to PCB |
Safe Operating Area (SOA) - DC Continuous
Typical Applications
IPD50N10S3L16ATMA2 is suitable for 7 applications: 48V Automotive Load Switch, Automotive DC-DC Converter, BLDC Motor Drive H-Bridge, Reverse-Polarity Protection, Synchronous Rectifier in SMPS, Industrial Solenoid/Relay Driver, Battery Management Disconnect Switch.
48V Automotive Load Switch
The IPD50N10S3L16ATMA2's 100V VDS rating and 15mΩ R_DS(on) make it ideal as a high-side load switch in 48V mild-hybrid automotive systems where it must tolerate 48V nominal bus voltage plus load-dump transients up to ~70V. With 50A continuous drain current rating at Tc=25°C, one device can drive large resistive or inductive loads such as PTC heaters, water pumps, or HVAC blowers. In typical high-side switch topology, the MOSFET sits between the 48V battery and the load, gated by an ECU driver; its low R_DS(on) keeps conduction loss to roughly I²·R, e.g., 6W at 20A, manageable with DPAK copper-pour PCB heatsinking. AEC-Q101 qualification is essential for this under-hood environment.
Recommended
Automotive DC-DC Converter
In 48V-to-12V or 12V-to-48V buck/boost converters for automotive power distribution, the IPD50N10S3L16ATMA2 can serve as either the high-side switch or the synchronous low-side rectifier. The 100V VDS rating provides ample margin above 48V nominal, while the 15mΩ R_DS(on) minimizes conduction loss at high duty cycles typical of buck converters. Switching losses are modest at frequencies up to 100 kHz, allowing compact magnetic designs. The DPAK package's low RthJC (~1°C/W) keeps junction temperature in check when mounted on a 100 cm²+ copper pad, supporting AEC-Q100/Q101 thermal cycling requirements.
Recommended
BLDC Motor Drive H-Bridge
For automotive and industrial BLDC motor drives up to ~3 kW, the IPD50N10S3L16ATMA2 fits comfortably as the low-side or high-side switch in a three-phase H-bridge. At 50A continuous and 180A pulsed, it handles motor inrush currents with proper thermal design. The OptiMOS-T technology provides low Qrr body-diode recovery, which reduces switching loss and EMI in hard-switched PWM motor control. When paired with gate drivers like IRSM808-105MH or 2ED2304S06FXUMA1, designers achieve sub-microsecond switching with robust dead-time control. AEC-Q101 qualification supports motor applications in EV auxiliaries, electric power steering, and HVAC blowers.
Recommended
Reverse-Polarity Protection
The IPD50N10S3L16ATMA2 serves as an efficient reverse-polarity protection (RPP) element in 48V or 24V battery-fed systems. Wired source-to-battery, drain-to-load, and driven by a charge pump or P-MOSFET emulation circuit, it dissipates only I·R_DS(on) loss versus a Schottky diode's Vf·I drop. At 20A continuous load this is 6W (MOSFET) versus 20W+ (Schottky) - a major efficiency win for always-on systems. The 100V VDS rating also tolerates load-dump transients that would destroy a Schottky diode. DPAK footprint fits standard RPP PCB layouts used across automotive body ECUs.
Recommended
Synchronous Rectifier in SMPS
In 24V or 48V-input isolated DC-DC converters and telecom bricks, the IPD50N10S3L16ATMA2 can replace Schottky rectifiers on the secondary side as a synchronous rectifier. The 100V rating covers 48V buses with margin, while 15mΩ R_DS(on) versus a typical 0.7V Schottky drop dramatically reduces conduction loss above 10A output current - improving efficiency by 3-5% at full load. The OptiMOS-T body diode has low Qrr, minimizing dead-time losses. DPAK package handles the thermal load when mounted on adequate copper pour, and AEC-Q101 status supports industrial and automotive power supply designs.
Recommended
Industrial Solenoid/Relay Driver
The IPD50N10S3L16ATMA2 works as a low-side driver for industrial solenoid valves, relays, and contactor coils where 24V or 48V DC switching is needed. Its 50A continuous rating supports multi-coil parallel drive, while 180A pulsed handles the inrush of large solenoids. The OptiMOS-T low Qrr minimizes inductive kick and supports fast turn-off with a simple TVS clamp. DPAK's tab is convenient for PCB-mount in industrial control cabinets; AEC-Q101 (though industrial-grade applications don't require it) gives extra reliability margin for factory-floor installations with high vibration.
Recommended
Battery Management Disconnect Switch
In Battery Management Systems (BMS) for 48V mild-hybrid packs or industrial lithium battery banks, the IPD50N10S3L16ATMA2 functions as the main disconnect MOSFET. Its 100V VDS handles pack voltages up to 48V nominal with margin, while 50A continuous covers pack charge/discharge currents. The 15mΩ R_DS(on) keeps parasitic loss to roughly I²·R - acceptable for the always-on main path. AEC-Q101 makes it suitable for automotive BMS applications. Designers typically back-to-back two MOSFETs for true bidirectional isolation.
Recommended
Recommended Products Summary
Engineering reference data for IPD50N10S3L16ATMA2 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD50N10S3L16ATMA1 | IPD50N06S409ATMA2 | IPD65R380E6ATMA1 |
|---|---|---|---|---|
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 60 V | 650 V |
| Maximum R_DS(on) at VGS=10V | 15 mΩ | 15 mΩ | Higher (60V part, different platform) | 380 mΩ (CoolMOS, much higher) |
| Technology Family | OptiMOS-T (100V) | OptiMOS-T (100V) | OptiMOS (60V) | CoolMOS E6 (650V) |
| Unit Price (qty 1000) | $1.07 | Similar | Similar | Higher (CoolMOS) |
Key Differentiators
- 100V VDS rating with 15mΩ R_DS(on) - best-in-class figure-of-merit (vs IPD50N06S409ATMA2)
- OptiMOS-T technology - low Qrr for hard-switched topologies (vs IPD65R380E6ATMA1)
- AEC-Q101 automotive qualification with high volume availability (vs Non-automotive-grade 100V MOSFETs)
Design Notes
In a 48V/20A continuous load-switch application, conduction loss is roughly I²·R_DS(on) = 400 A² · 0.015 Ω = 6 W. The DPAK package has RthJC of approximately 1.0 °C/W. With a 100 cm² copper-pour PCB (RthJA ≈ 40 °C/W), junction temperature rises about 40 °C above ambient - generally acceptable without an external heatsink. For continuous 30 A+ operation, plan for a clip-on heatsink attached to the DPAK tab, or migrate to a D2PAK (IPB-series) variant. Estimated values based on typical Infineon DPAK thermal resistance; verify against the manufacturer datasheet.
The DPAK tab is electrically connected to the drain. The PCB land pattern must use a single large copper pour under the tab to act as a thermal pad and as the drain electrical connection. Recommended footprint: 6.5 mm × 7.5 mm exposed pad with vias to inner copper layers. Solder paste should be applied to both the leads and the exposed tab for maximum thermal transfer. Avoid placing signal traces within 2 mm of the drain tab to prevent high-voltage creepage issues.
Do not drive the gate with VGS below 8V if you need the datasheet's 15 mΩ R_DS(on); at VGS = 5V the on-resistance can be 2-3× higher. For 3.3V MCU logic-level drive, use a gate-driver IC such as 2ED2304S06FXUMA1 or IRLL024ZTRPBF. Also, when switching inductive loads (solenoids, motors), add a TVS or RC snubber across the drain-source to clamp avalanche energy within the part's EAS rating; without clamping, avalanche-induced failure is the most common reliability issue.
Compliance Information
AEC-Q101 qualified (automotive discrete standard, equivalent stringency to AEC-Q100). RoHS compliant and lead-free per DigiKey product listing. REACH compliance per Infineon product declarations.
