IPD600N25N3GATMA1 vs IPD60R600C6ATMA1 Comparison

Detailed side-by-side comparison of IPD600N25N3GATMA1 by Infineon and IPD60R600C6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD600N25N3GATMA1 IPD60R600C6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.84 $0.92
Manufacturer Infineon Technologies Infineon Technologies
Part Series OptiMOS 3 —
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 250 V 600 V
Continuous Drain Current (ID) at Tc 25 A —
Power Dissipation (PD) at Tc 136 W —
On-Resistance RDS(on) max 60 mOhm at VGS = 10 V —
Gate Threshold Voltage [DATA_NEEDED: VGS(th) typical/min/max] —
Operating Junction Temperature -55 C to +175 C —
Package PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount PG-TO252-3 (DPAK)
Mounting Type Surface Mount (Tape & Reel) Surface Mount
Technology OptiMOS 3 trench MOSFET CoolMOS C6 (Superjunction)
Lead Plating Pb-free —
RoHS Compliance Compliant —
Halogen Free Yes, per IEC 61249-2-21 —
JEDEC Qualification Qualified for target application —
Series — CoolMOS C6
Part Suffix — ATMA1 (Tape & Reel)
Gate-Source Voltage (VGS) Max — ±20 V
Continuous Drain Current (ID) at TC=25°C — 7.3 A
Continuous Drain Current (ID) at TC=100°C — [DATA_NEEDED: ID at TC=100°C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) Max at VGS=10V — 600 mΩ
Total Power Dissipation (Ptot) at TC=25°C — 63 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Operating Temperature Range — -55 °C to +150 °C
Number of Pins — 3 (Gate, Drain, Source)
RoHS Status — Compliant
MSL Level — 1

Datasheets & Resources

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