IPD600N25N3GATMA1 vs IPP600N25N3GXKSA1 Comparison

Detailed side-by-side comparison of IPD600N25N3GATMA1 by Infineon and IPP600N25N3GXKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD600N25N3GATMA1 IPP600N25N3GXKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.84 $1.62
Manufacturer Infineon Technologies Infineon Technologies
Part Series OptiMOS 3 —
Transistor Type N-Channel MOSFET —
Drain-Source Voltage (VDS) 250 V —
Continuous Drain Current (ID) at Tc 25 A —
Power Dissipation (PD) at Tc 136 W —
On-Resistance RDS(on) max 60 mOhm at VGS = 10 V —
Gate Threshold Voltage [DATA_NEEDED: VGS(th) typical/min/max] —
Operating Junction Temperature -55 C to +175 C —
Package PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount —
Mounting Type Surface Mount (Tape & Reel) Through Hole
Technology OptiMOS 3 trench MOSFET MOSFET (Metal Oxide)
Lead Plating Pb-free —
RoHS Compliance Compliant —
Halogen Free Yes, per IEC 61249-2-21 —
JEDEC Qualification Qualified for target application —
Series — OptiMOS 3
Part Status — Active
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 250 V
Continuous Drain Current (ID) at Tc=25C — 25 A
Static Drain-to-Source On-Resistance (RDS(on)) max — 60 mOhm at VGS=10V
Power Dissipation (PD) at Tc=25C — 136 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Package / Case — TO-220-3 (PG-TO220-3-1)
Operating Temperature Range — -55C to +175C (junction)
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical value]
Reverse Recovery Time (trr) — [DATA_NEEDED: trr typical value]
Lead Free Status — Lead Free / RoHS Compliant
Pin Count — 3 (Gate, Drain, Source)

Datasheets & Resources

Browse All Products Create BOM Request Quote