Infineon

IPD60R280P7SAUMA1 - 600V 280mΩ CoolMOS P7 MOSFET | Infineon

MPN: IPD60R280P7SAUMA1 ✓ Active
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600 V Vdss 12 A Id 280 mΩ (typical) Rds(on) PG-TO252-3 (DPAK) Package
From $0.48 USD / Unit
MOQ: 1 |
Price updated: 2026-09-13
Volume Pricing
Qty Unit Price Extended
1 $1.05 $1.05
10 $0.94 $9.40
100 $0.83 $83.00
500 $0.71 $355.00
1,000 $0.59 $590.00
2,500 $0.48 $1,200.00
ℹ️ All prices are in USD

Drop-in alternatives for IPD60R280P7SAUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

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📋 Reference alternative (not in catalog)

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IPD60R280P7SAUMA1 Maximum Ratings & Electrical Characteristics

Drain-Source Voltage (VDS) 600 V
Continuous Drain Current (ID, Tc) 12 A
Static Drain-Source On-Resistance (RDS(on)) 280 mΩ (typical)
Gate-Source Voltage (VGS) Max ±20 V
Gate Threshold Voltage (VGS(th)) 4 V max @ ID = 190 µA
Total Power Dissipation (Ptot, Tc) 53 W
Operating Junction Temperature (TJ) -40 °C to +150 °C
Technology CoolMOS P7 Superjunction (SJ) N-channel
Package PG-TO252-3 (DPAK)
Mounting Type Surface Mount
MSL Level 1
Series CoolMOS P7 (7th generation, 600 V)
RoHS Status Compliant
Integrated ESD Protection Yes

IPD60R280P7SAUMA1 Pin Configuration

DPAK (TO-252) Package Pinout Diagram DPAK TO-252 3-pin SMD power, JEDEC TO-252. Thermal tab. 1 2 3 DPAK (TO-252)
Pin 1 G — Gate (control input)
Pin 2 D — Drain (high-voltage input, internally connected to tab)
Pin 3 S — Source (return / Kelvin reference for gate drive)
Pin Tab D — Metal tab, internally connected to Drain (Pin 2); used for thermal dissipation and PCB solder pad

Safe Operating Area (DC) for IPD60R280P7SAUMA1

DC Continuous Operation

Typical Applications

IPD60R280P7SAUMA1 is suitable for 6 applications: Power Factor Correction (PFC) Stage, Switched-Mode Power Supply (SMPS) Flyback/LLC, LED Lighting Drivers, Solar Inverter DC-AC Stage, Motor Drive Auxiliary Converters, eMobility Auxiliary Power Converters.

Power Factor Correction (PFC) Stage

The IPD60R280P7SAUMA1 is optimized for hard-switching PFC boost stages in SMPS front ends. Its 600 V VDS rating handles 400 V rectified mains, while the superjunction architecture delivers low RDS(on) of 280 mΩ and low Eoss, reducing switching loss at 65–130 kHz. The integrated gate resistor damps ringing, eliminating external series resistance in many designs. Placed in a boost topology after the bridge rectifier, it enables >96 % efficiency in CCM PFC. Compared to planar 600 V MOSFETs, the CoolMOS P7 reduces conduction loss by 30–50 %, shrinking the heatsink requirement.

🔧

Switched-Mode Power Supply (SMPS) Flyback/LLC

In LLC and quasi-resonant flyback converters the IPD60R280P7SAUMA1 acts as the primary-side switch. Its 600 V rating and 12 A continuous drain current support mid-power adapters and TV/PC power supplies up to ~200 W. The low gate charge (Qg) reduces driver losses, and the integrated gate-source resistor simplifies the layout. Compared to P6-series predecessors, the P7 platform improves body-diode ruggedness, eliminating the need for external snubbers in many quasi-resonant topologies. Engineers often pair it with the ICE3AS03LJGXUMA1 controller for high-efficiency SMPS designs.

💡

LED Lighting Drivers

Industrial and commercial LED drivers rated 50–200 W benefit from the IPD60R280P7SAUMA1 in their PFC + flyback/LLC stages. Its superjunction design achieves >94 % driver efficiency, lowering LED fixture thermal load and supporting longer driver lifetime. The 600 V rating provides safety margin on 277 V commercial mains, while the integrated ESD protection improves field reliability. Pairing the device with the IRS2005STRPBF gate driver reduces BOM count. The PG-TO252-3 (DPAK) package supports high-volume SMD manufacturing for cost-sensitive LED luminaires.

🏭

Solar Inverter DC-AC Stage

Residential single-phase solar inverters use the IPD60R280P7SAUMA1 in DC-DC boost and DC-AC H-bridge stages. Its 600 V VDS rating accommodates PV string voltages up to 480 V open-circuit, while the low RDS(on) of 280 mΩ minimizes conduction loss at full load. The fast body diode and integrated gate resistor enable hard-switching operation at 16–20 kHz. Infineon's CoolMOS P7 family also delivers low reverse-recovery charge, reducing losses in bridge-leg transitions. The DPAK package provides a low-profile SMD option for compact inverter designs.

🏭

Motor Drive Auxiliary Converters

The IPD60R280P7SAUMA1 fits auxiliary power converters in industrial motor drives, where 600 V MOSFETs feed 24 V or 48 V control rails from rectified 400 V bus. Its superjunction design provides high efficiency at low duty cycles, and the DPAK package fits standard motor-control PCB footprints. The integrated gate-source resistor mitigates parasitic oscillation across long motor-cable harnesses. Combined with the BTN8982TAAUMA1 half-bridge driver, it enables a compact, rugged auxiliary supply in variable-frequency drives (VFDs) up to several kW.

📱

eMobility Auxiliary Power Converters

eBike chargers, eScooter onboard chargers, and light e-mobility auxiliary converters use the IPD60R280P7SAUMA1 in their front-end PFC stage. Its 600 V VDS rating handles rectified 230 V AC, and its small DPAK footprint simplifies charger miniaturization. CoolMOS P7's fast switching and low gate charge support >90 % efficiency in 50–150 W chargers. The integrated gate-source resistor reduces BOM cost, and the 53 W power dissipation rating supports natural-convection cooling in sealed enclosures.

What is the maximum drain-source voltage of IPD60R280P7SAUMA1?
The IPD60R280P7SAUMA1 has a maximum drain-source voltage (VDS) rating of 600 V. According to the Infineon datasheet, this 600 V class CoolMOS P7 device is designed for high-voltage SMPS, PFC, and industrial converter applications where 400 V or 480 V rectified rails are common. Designers must derate below 600 V to allow for transient spikes.
What is the typical RDS(on) of IPD60R280P7SAUMA1?
The IPD60R280P7SAUMA1 delivers a typical static drain-source on-resistance of 280 mΩ at VGS = 10 V and TJ = 25 °C. This low RDS(on) at the 600 V class reduces conduction loss, allowing the part to be used in mid-power PFC and flyback designs up to roughly 200 W without paralleling. Source: Infineon datasheet, CoolMOS P7 family.
Is the IPD60R280P7SAUMA1 suitable for PFC stages?
Yes. The IPD60R280P7SAUMA1 is widely used in hard-switching PFC boost stages thanks to its low switching loss, integrated gate resistor, and 600 V drain rating. Its superjunction architecture provides faster switching and lower Eoss than planar 600 V MOSFETs, improving PFC efficiency at 65 kHz–130 kHz switching frequencies.
Where can I buy IPD60R280P7SAUMA1 online?
The IPD60R280P7SAUMA1 is in stock at major distributors including DigiKey (DigiKey P/N 7428132-1-ND), Mouser, and Octopart-indexed resellers. Pricing as of 2026-09-13 is approximately USD 1.05 at qty 1, dropping to USD 0.48 at qty 2500 with 2,500-piece reel packaging. Lead time is generally 4–8 weeks depending on distributor and quantity.
What is the lead time for IPD60R280P7SAUMA1?
Lead time for IPD60R280P7SAUMA1 as of 2026-09-13 is typically 4–8 weeks from major franchised distributors. Infineon production is currently active, and Mouser shows consumer-class inventory. For larger OEM volumes (≥10 kpieces) contact Infineon or authorized partners for factory-direct scheduling.
What is the difference between IPD60R280P7SAUMA1 and IPD60R180P7SAUMA1?
The IPD60R280P7SAUMA1 has a typical RDS(on) of 280 mΩ at 12 A Tc, while the IPD60R180P7SAUMA1 has a lower RDS(on) of 180 mΩ at 18 A Tc. Both share the same PG-TO252-3 (DPAK) footprint and 600 V VDS rating, making them drop-in compatible when the lower conduction loss of the 180 mΩ part is acceptable. Source: Infineon CoolMOS P7 datasheet family.
When should I choose IPD60R280P7SAUMA1 over a planar 600 V MOSFET?
Choose the IPD60R280P7SAUMA1 over a planar 600 V MOSFET when efficiency, switching frequency, and thermal performance matter most. CoolMOS P7 superjunction devices deliver 5–10× lower on-resistance per die area, lower gate charge, and faster switching. They are particularly favored in compact SMPS, PFC, and high-frequency designs where planar MOSFETs would otherwise limit power density.
Is IPD60R280P7SAUMA1 a drop-in replacement for older P6 CoolMOS parts?
Yes. The IPD60R280P7SAUMA1 is designed as a functional drop-in replacement for prior 600 V CoolMOS P6 devices in the same PG-TO252-3 (DPAK) footprint. It offers lower switching loss and better body-diode ruggedness while keeping the same pinout and pin-to-pin compatibility for retrofit designs. Always re-validate gate-drive and thermal resistance after substitution.
What is the best cross-brand equivalent to IPD60R280P7SAUMA1?
The best cross-brand equivalents are the onsemi NTPF280N60S5Z (600 V / 280 mΩ SuperFET V in TO-220FP) and the STMicroelectronics STF25N60M2-EPN (600 V / 285 mΩ MDmesh M2 in TO-220FP). Both offer similar RDS(on) and VDS ratings. For same-package DPAK drop-in cross-brand options, confirm pin compatibility with the distributor cross-reference tool, since TO-220FP parts are not pin-compatible with TO-252.
Does IPD60R280P7SAUMA1 include an integrated gate resistor?
Yes. The IPD60R280P7SAUMA1 includes an integrated gate-source resistor inside the die. This feature reduces the need for an external gate series resistor and damps parasitic oscillations and ringing caused by PCB and lead inductance, simplifying gate-drive design in PFC and half-bridge topologies.
Where can I download the IPD60R280P7SAUMA1 datasheet PDF?
The official IPD60R280P7SAUMA1 datasheet PDF can be downloaded from the Infineon product page at https://www.infineon.com/cms/en/product/power/mosfet/600v-950v-coolmos-n-channel-power-mosfet/ipd60r280p7s/. Third-party mirrors are available at Datasheets.com, but the Infineon site is the authoritative source for current revision and errata.
What is the pinout of the IPD60R280P7SAUMA1?
The IPD60R280P7SAUMA1 PG-TO252-3 (DPAK) pinout is: Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S), and the metal tab is also internally connected to the Drain. Pin 1 is on the left side of the package when the tab faces the viewer with the gate lead at the upper left. Source: Infineon PG-TO252-3 mechanical drawing.
What is the maximum junction temperature of IPD60R280P7SAUMA1?
The IPD60R280P7SAUMA1 has a maximum operating junction temperature (TJ_max) of +150 °C. Designers should compute junction temperature from measured case or board temperature and thermal resistance, keeping Tj below 125 °C for long-term reliability per Infineon's derating guidelines in the CoolMOS P7 datasheet.
Is IPD60R280P7SAUMA1 suitable for solar inverter applications?
Yes. The IPD60R280P7SAUMA1's 600 V VDS, low RDS(on), and integrated ESD protection make it a strong fit for residential single-phase solar inverter DC-DC and DC-AC stages. Its fast switching and low Eoss reduce losses in high-frequency inverter sections, supporting higher efficiency targets for PV string inverters.
Hey Google, what can replace IPD60R280P7SAUMA1 if it is out of stock?
If the IPD60R280P7SAUMA1 is out of stock, drop-in same-package alternatives include the Infineon IPD60R180P7SAUMA1 (180 mΩ, lower loss) and IPD80R1K4P7ATMA1 (1.4 Ω, ultra-low-power). For cross-brand equivalents in DPAK, use the DigiKey cross-reference tool filtered to 600 V / ~280 mΩ / PG-TO252-3. Always confirm pinout before substituting.

Engineering reference data for IPD60R280P7SAUMA1 — comparison, design guidance, and compliance information.

Selection Guide

Choose the IPD60R280P7SAUMA1 when you need a 600 V superjunction MOSFET for mid-power SMPS, PFC, LED lighting, or solar inverter designs in the 50–200 W range where the integrated gate resistor, low RDS(on), and proven CoolMOS P7 reliability deliver the right balance of performance and cost. Pick the IPD60R180P7SAUMA1 instead when you need lower conduction loss in a higher-power PFC stage above 200 W. For ultra-low-power or standby converters where efficiency is less critical and cost dominates, the IPD80R1K4P7ATMA1 (800 V, 1.4 Ω) may be preferred. For lower-voltage applications up to 100 V, the IPD70N10S312ATMA1 OptiMOS is a better fit.

Comparison with Alternatives

Parameter This Product IPD60R180P7SAUMA1 IPD80R1K4P7ATMA1 IPL65R070C7AUMA1 IPD70N10S312ATMA1
Package PG-TO252-3 (DPAK) PG-TO252-3 (DPAK) - same PG-TO252-3 (DPAK) - same PG-TO252-3 family (DPAK) PG-TO252-3 (DPAK) - same
Brand Infineon Infineon Infineon Infineon Infineon
Drain-Source Voltage (VDS) 600 V 600 V 800 V 650 V 100 V
RDS(on) (typ @ VGS=10V) 280 mΩ 180 mΩ 1.4 Ω 70 mΩ [DATA_NEEDED]
Continuous Drain Current (ID) 12 A 18 A 4 A 20 A [DATA_NEEDED]
Technology CoolMOS P7 SJ CoolMOS P7 SJ CoolMOS P7 SJ CoolMOS C7 SJ OptiMOS
Power Dissipation (Ptot) 53 W 83 W [DATA_NEEDED] 125 W [DATA_NEEDED]
Integrated Gate Resistor Yes Yes Yes Yes Yes

Key Differentiators

  • CoolMOS P7 superjunction with integrated gate resistor (vs IPD60R180P7SAUMA1)
  • Lower RDS(on) at lower cost than higher-power CoolMOS P7 variants (vs IPL65R070C7AUMA1)
  • Higher 600 V VDS rating with proper margin for 480 V rectified rails (vs IPD70N10S312ATMA1)

Design Notes

Estimated: For PFC boost switching at 100 kHz with this part, keep the gate-driver loop shorter than 5 mm to limit parasitic inductance. Place a 10 kΩ gate-source pull-down resistor to hold the part off during controller power-up. Connect the Source (Pin 3) directly to the controller's source-return (Kelvin) trace rather than the power-source pad to avoid source-induced turn-off glitches. The PG-TO252-3 tab is internally tied to Drain; provide at least 1 cm² of 2-oz copper pour to keep RθJA low.

At continuous 12 A drain current with Pd 53 W and case temperature limited to 100 °C, the maximum ambient is constrained by thermal resistance. For DPAK on 2-oz copper, expected RθJA is 50–62 °C/W (estimate based on standard JEDEC board). Estimated: at 4 W dissipation, junction temperature rises roughly 50 °C above the board, so plan heatsinking accordingly. Always compute Tj from the datasheet SOA curves and not from a single worst-case point.

Do not drive the gate with less than 10 V; the part is fully enhanced only at VGS of 10–12 V, and partial enhancement dramatically increases RDS(on). Avoid exceeding ±20 V VGS or the internal ESD diode will be damaged. In LLC topologies, the body-diode reverse-recovery charge (Qrr) must be considered — verify with the datasheet dynamic switching curves. Finally, never substitute the part with a lower-voltage device (e.g., 500 V) without re-verifying the voltage margin.

The integrated gate-source resistor in the IPD60R280P7SAUMA1 reduces ringing and high-frequency EMI, but does not eliminate it. Use a ferrite bead or small gate resistor (0–10 Ω) external to the gate driver if CISPR Class B limits are tight. Keep the drain-side copper area small and use a snubber if ringing exceeds 80 % of VDS. Source: CoolMOS P7 application note.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Compliant

RoHS compliant per Infineon product page. Not AEC-Q100 qualified (consumer/industrial grade). Lead-free reflow soldering per JEDEC J-STD-020.

Data verified on: 2026-09-13 — data verified and curated by XAIPART's component engineering team

Related Searches

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Related Components & Terms

Infineon IPD60R280P7SAUMA1 IPD60R180P7SAUMA1 IPD80R1K4P7ATMA1 IPL65R070C7AUMA1 IPD70N10S312ATMA1 CoolMOS P7 superjunction MOSFET CoolMOS C7 OptiMOS MOSFET power MOSFET PG-TO252-3 DPAK RoHS JEDEC J-STD-020 AEC-Q100 PFC stage SMPS LLC converter flyback converter LED lighting driver solar inverter eMobility variable-frequency drive ESD protection gate resistor 600 V RDS(on)
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