IPD60R280P7SAUMA1 vs IPD70R1K4P7SAUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60R280P7SAUMA1 disebabkan oleh Infineon dan IPD70R1K4P7SAUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD70R1K4P7SAUMA1 IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD60R280P7SAUMA1 IPD70R1K4P7SAUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 600 V 700 V
Continuous Drain Current (ID, Tc) 12 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM]
Static Drain-Source On-Resistance (RDS(on)) 280 mΩ (typical) —
Gate-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) 4 V max @ ID = 190 µA [DATA_NEEDED: VGS(th) typical]
Total Power Dissipation (Ptot, Tc) 53 W —
Operating Junction Temperature (TJ) -40 °C to +150 °C —
Technology CoolMOS P7 Superjunction (SJ) N-channel Superjunction (CoolMOS P7)
Kemasan PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 —
Series CoolMOS P7 (7th generation, 600 V) —
Status RoHS Compliant Compliant
Integrated ESD Protection Yes —
Manufacturer — Infineon Technologies
Part Family — CoolMOS P7 (700V Superjunction)
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at Tc=25C — 4 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
On-Resistance RDS(on) max at VGS=10V, ID — 1.4 ohm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Total Power Dissipation (Ptot) at Tc=25C — 23 W
Suhu Hubungan Operasi — -55C to +150C
Kiraan Pin — 3 (Gate, Drain, Source)
Avalanche Energy Rated — Yes (100% avalanche tested)
ESD Protection — Integrated (per datasheet)

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