IPD60R360P7SAUMA1 vs IPD65R380E6ATMA1 Comparison

Detailed side-by-side comparison of IPD60R360P7SAUMA1 by Infineon and IPD65R380E6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD60R360P7SAUMA1 IPD60R360P7SAUMA1 - 600V 360mOhm CoolMOS P7 MOSFET | Infineon

IPD60R360P7SAUMA1 - 600V 360mOhm CoolMOS P7 MOSFET | Infineon

IPD60R360P7SAUMA1 βœ“ Active

Specification Comparison

Parameter IPD60R360P7SAUMA1 IPD65R380E6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.65
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 CoolMOSβ„’ E6
Technology Superjunction (SJ) N-Channel MOSFET Superjunction (CoolMOSβ„’)
Drain-Source Voltage (VDS) 600 V β€”
Continuous Drain Current (ID) at TC 9 A β€”
Static Drain-Source On-Resistance (RDS(on)) 360 mOhm (typ, VGS = 10 V) β€”
Power Dissipation (PD) at TC 41 W β€”
Gate-Source Threshold Voltage (VGS(th)) 3.0 V to 4.5 V (typ) β€”
Gate Charge (Qg) [DATA_NEEDED: Qg value] β€”
Package / Case PG-TO252-3 (DPAK) β€”
Mounting Type Surface Mount Surface Mount
Number of Pins 3 β€”
Operating Temperature Range -55C to +150C (junction) -55 Β°C to +150 Β°C
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) 1
Channel Type N-Channel β€”
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (V_DS) β€” 650 V
Continuous Drain Current (I_D) at T_C β€” 10.6 A
R_DS(on) max at V_GS=10V β€” 380 mΞ©
R_DS(on) test conditions β€” 3.2 A, 10 V
Gate-Source Voltage (V_GS) max β€” Β±20 V
Gate Threshold Voltage (V_GS(th)) β€” 3.5 V typ
Gate Charge (Q_G) β€” 39 nC at 10 V
Input Capacitance (C_iss) β€” 710 pF at 100 V
Power Dissipation (P_D) at T_C β€” 83 W
Package β€” PG-TO252-3 (DPAK), surface mount

Datasheets & Resources

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