IPD60R360P7SAUMA1 vs IPD65R380E6ATMA1 Comparison
Detailed side-by-side comparison of IPD60R360P7SAUMA1 by Infineon and IPD65R380E6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD60R360P7SAUMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS™ E6 |
| Technology | Superjunction (SJ) N-Channel MOSFET | Superjunction (CoolMOS™) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) at TC | 9 A | — |
| Static Drain-Source On-Resistance (RDS(on)) | 360 mOhm (typ, VGS = 10 V) | — |
| Power Dissipation (PD) at TC | 41 W | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.0 V to 4.5 V (typ) | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Package / Case | PG-TO252-3 (DPAK) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 3 | — |
| Operating Temperature Range | -55C to +150C (junction) | -55 °C to +150 °C |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Channel Type | N-Channel | — |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 650 V |
| Continuous Drain Current (I_D) at T_C | — | 10.6 A |
| R_DS(on) max at V_GS=10V | — | 380 mΩ |
| R_DS(on) test conditions | — | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V typ |
| Gate Charge (Q_G) | — | 39 nC at 10 V |
| Input Capacitance (C_iss) | — | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | — | 83 W |
| Package | — | PG-TO252-3 (DPAK), surface mount |