IPD60R380C6ATMA1 vs IPD60R600C6 Comparison

Detailed side-by-side comparison of IPD60R380C6ATMA1 by Infineon and IPD60R600C6 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD60R380C6ATMA1 IPD60R600C6
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.41 $0.42
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) at TC=25C 10.6 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 380 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at TC=25C 83 W —
Operating Junction Temperature (TJ) -55C to +150C —
Storage Temperature [DATA_NEEDED: storage temperature] —
Technology CoolMOS C6 Superjunction Superjunction (CoolMOS)
FET Type N-Channel N-Channel
Package PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL level] 1
RoHS Status Compliant Compliant
Drain-Tab Connection Exposed pad (electrically connected to drain) —
Manufacturer — Infineon Technologies
Series — CoolMOS C6
Drain-to-Source Voltage (V DSS) — 600 V
Continuous Drain Current (I D) at T C = 25 C — 7.3 A
Static Drain-to-Source On-Resistance (R DS(on)) max at V GS = 10 V — 600 mOhm
Maximum Power Dissipation (P D) at T C = 25 C — 63 W
Gate Threshold Voltage (V GS(th)) — [DATA_NEEDED: V GS(th) typical and minimum]
Gate Charge (Q G) typical — [DATA_NEEDED: Q G value]
Operating Junction Temperature — -55 C to +150 C

Datasheets & Resources

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