IPD60R380C6ATMA1 vs IPD60R600C6 Сравнение
Подробное сравнение бок о бок IPD60R380C6ATMA1 от Infineon и IPD60R600C6 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IPD60R380C6ATMA1 | IPD60R600C6 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,41 | $0,42 |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) at TC=25C | 10.6 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | 380 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at TC=25C | 83 W | — |
| Operating Junction Temperature (TJ) | -55C to +150C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Technology | CoolMOS C6 Superjunction | Superjunction (CoolMOS) |
| FET Type | N-Channel | N-Channel |
| Корпус | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | [DATA_NEEDED: MSL level] | 1 |
| Статус RoHS | Compliant | Compliant |
| Drain-Tab Connection | Exposed pad (electrically connected to drain) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS C6 |
| Drain-to-Source Voltage (V DSS) | — | 600 V |
| Continuous Drain Current (I D) at T C = 25 C | — | 7.3 A |
| Static Drain-to-Source On-Resistance (R DS(on)) max at V GS = 10 V | — | 600 mOhm |
| Maximum Power Dissipation (P D) at T C = 25 C | — | 63 W |
| Gate Threshold Voltage (V GS(th)) | — | [DATA_NEEDED: V GS(th) typical and minimum] |
| Gate Charge (Q G) typical | — | [DATA_NEEDED: Q G value] |
| Рабочая температура перехода | — | -55 C to +150 C |