IPD60R380C6ATMA1 vs IPD60R600C6 Comparaison
Comparaison détaillée côte à côte de IPD60R380C6ATMA1 par Infineon et IPD60R600C6 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPD60R380C6ATMA1 | IPD60R600C6 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,41 | $0,42 |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) at TC=25C | 10.6 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | 380 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at TC=25C | 83 W | — |
| Operating Junction Temperature (TJ) | -55C to +150C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Technology | CoolMOS C6 Superjunction | Superjunction (CoolMOS) |
| FET Type | N-Channel | N-Channel |
| Boîtier | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | [DATA_NEEDED: MSL level] | 1 |
| Statut RoHS | Compliant | Compliant |
| Drain-Tab Connection | Exposed pad (electrically connected to drain) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS C6 |
| Drain-to-Source Voltage (V DSS) | — | 600 V |
| Continuous Drain Current (I D) at T C = 25 C | — | 7.3 A |
| Static Drain-to-Source On-Resistance (R DS(on)) max at V GS = 10 V | — | 600 mOhm |
| Maximum Power Dissipation (P D) at T C = 25 C | — | 63 W |
| Gate Threshold Voltage (V GS(th)) | — | [DATA_NEEDED: V GS(th) typical and minimum] |
| Gate Charge (Q G) typical | — | [DATA_NEEDED: Q G value] |
| Température de jonction en fonctionnement | — | -55 C to +150 C |