IPD60R380C6ATMA1 vs IPD60R600C6 Vergleich

Detaillierter Direktvergleich von IPD60R380C6ATMA1 von Infineon und IPD60R600C6 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPD60R380C6ATMA1 IPD60R600C6
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,41 $0,42
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) at TC=25C 10.6 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 380 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at TC=25C 83 W —
Operating Junction Temperature (TJ) -55C to +150C —
Storage Temperature [DATA_NEEDED: storage temperature] —
Technology CoolMOS C6 Superjunction Superjunction (CoolMOS)
FET Type N-Channel N-Channel
Gehäuse PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Montageart Surface Mount Surface Mount
MSL-Level [DATA_NEEDED: MSL level] 1
RoHS-Status Compliant Compliant
Drain-Tab Connection Exposed pad (electrically connected to drain) —
Manufacturer — Infineon Technologies
Series — CoolMOS C6
Drain-to-Source Voltage (V DSS) — 600 V
Continuous Drain Current (I D) at T C = 25 C — 7.3 A
Static Drain-to-Source On-Resistance (R DS(on)) max at V GS = 10 V — 600 mOhm
Maximum Power Dissipation (P D) at T C = 25 C — 63 W
Gate Threshold Voltage (V GS(th)) — [DATA_NEEDED: V GS(th) typical and minimum]
Gate Charge (Q G) typical — [DATA_NEEDED: Q G value]
Betriebs-Sperrschichttemperatur — -55 C to +150 C

Datenblätter & Ressourcen

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