IPD60R600C6ATMA1 vs IPD65R380E6ATMA1 Perbandingan
Perbandingan bersamaan detil IPD60R600C6ATMA1 dari Infineon dan IPD65R380E6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD60R600C6ATMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C6 | CoolMOS™ E6 |
| Part Suffix | ATMA1 (Tape & Reel) | — |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | CoolMOS C6 (Superjunction) | Superjunction (CoolMOS™) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Continuous Drain Current (ID) at TC=25°C | 7.3 A | — |
| Continuous Drain Current (ID) at TC=100°C | [DATA_NEEDED: ID at TC=100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) Max at VGS=10V | 600 mΩ | — |
| Total Power Dissipation (Ptot) at TC=25°C | 63 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Rentang Suhu Kerja | -55 °C to +150 °C | -55 °C to +150 °C |
| Paket | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK), surface mount |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (Gate, Drain, Source) | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 | 1 |
| Drain-Source Voltage (V_DS) | — | 650 V |
| Continuous Drain Current (I_D) at T_C | — | 10.6 A |
| R_DS(on) max at V_GS=10V | — | 380 mΩ |
| R_DS(on) test conditions | — | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V typ |
| Gate Charge (Q_G) | — | 39 nC at 10 V |
| Input Capacitance (C_iss) | — | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | — | 83 W |