IPD60R600PFD7SAUMA1 vs IPD600N25N3GATMA1 Comparison

Detailed side-by-side comparison of IPD60R600PFD7SAUMA1 by Infineon and IPD600N25N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD60R600PFD7SAUMA1 IPD600N25N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.45 $0.84
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS PFD7 —
Transistor Type N-Channel MOSFET N-Channel MOSFET
Technology Superjunction (CoolMOS) OptiMOS 3 trench MOSFET
Drain-Source Voltage (V_DS) 600 V —
Continuous Drain Current (I_D) 6 A (Tc) —
R_DS(on) Max 600 mΩ @ V_GS = 10 V, I_D = 1.7 A —
Total Gate Charge (Q_g) 8.5 nC —
Output Capacitance (C_oss) 8 pF @ 400 V —
Power Dissipation (P_D) 31 W (Tc) —
Gate Threshold Voltage (V_GS(th)) 3.5 V (typ) —
Package PG-TO252-3 (DPAK) PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount
Mounting Type Surface Mount Surface Mount (Tape & Reel)
Operating Temperature -55°C to +150°C (Tj) —
MSL Level 1 (per JEDEC J-STD-020) —
RoHS Status Compliant —
Reel Quantity 2500 —
Part Series — OptiMOS 3
Drain-Source Voltage (VDS) — 250 V
Continuous Drain Current (ID) at Tc — 25 A
Power Dissipation (PD) at Tc — 136 W
On-Resistance RDS(on) max — 60 mOhm at VGS = 10 V
Gate Threshold Voltage — [DATA_NEEDED: VGS(th) typical/min/max]
Operating Junction Temperature — -55 C to +175 C
Lead Plating — Pb-free
RoHS Compliance — Compliant
Halogen Free — Yes, per IEC 61249-2-21
JEDEC Qualification — Qualified for target application

Datasheets & Resources

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