IPD65R380E6ATMA1 vs IPD60N10S412ATMA1 Comparison
Detailed side-by-side comparison of IPD65R380E6ATMA1 by Infineon and IPD60N10S412ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD65R380E6ATMA1 | IPD60N10S412ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ E6 | — |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET, Enhancement Mode |
| Technology | Superjunction (CoolMOS™) | — |
| Drain-Source Voltage (V_DS) | 650 V | — |
| Continuous Drain Current (I_D) at T_C | 10.6 A | — |
| R_DS(on) max at V_GS=10V | 380 mΩ | — |
| R_DS(on) test conditions | 3.2 A, 10 V | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Gate Threshold Voltage (V_GS(th)) | 3.5 V typ | — |
| Gate Charge (Q_G) | 39 nC at 10 V | — |
| Input Capacitance (C_iss) | 710 pF at 100 V | — |
| Power Dissipation (P_D) at T_C | 83 W | — |
| Operating Temperature Range | -55 °C to +150 °C | — |
| Package | PG-TO252-3 (DPAK), surface mount | PG-TO252-3-313 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant (Green Product) |
| MSL Level | 1 | MSL1 (per JEDEC J-STD-020) |
| Part Number | — | IPD60N10S412ATMA1 |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, TC=25C) | — | 60 A |
| Power Dissipation (PD, TC=25C) | — | 94 W |
| RDS(on) Max @ VGS=10V | — | 12.2 mOhm |
| Operating Junction Temperature | — | -55 C to +175 C |
| Pin Count | — | 3 (2 + Tab) |
| Peak Reflow Temperature | — | 260 C |
| AEC-Q101 Qualification | — | Qualified (Automotive Grade) |
| Avalanche Tested | — | 100% Avalanche Tested |
| Halogen Free | — | Yes (per Infineon definition) |