IPD65R380E6ATMA1 vs IPD60N10S412ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD65R380E6ATMA1 disebabkan oleh Infineon dan IPD60N10S412ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD65R380E6ATMA1 | IPD60N10S412ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ E6 | — |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET, Enhancement Mode |
| Technology | Superjunction (CoolMOS™) | — |
| Drain-Source Voltage (V_DS) | 650 V | — |
| Continuous Drain Current (I_D) at T_C | 10.6 A | — |
| R_DS(on) max at V_GS=10V | 380 mΩ | — |
| R_DS(on) test conditions | 3.2 A, 10 V | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Gate Threshold Voltage (V_GS(th)) | 3.5 V typ | — |
| Gate Charge (Q_G) | 39 nC at 10 V | — |
| Input Capacitance (C_iss) | 710 pF at 100 V | — |
| Power Dissipation (P_D) at T_C | 83 W | — |
| Gambaran Suhu Operasi | -55 °C to +150 °C | — |
| Kemasan | PG-TO252-3 (DPAK), surface mount | PG-TO252-3-313 (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant (Green Product) |
| Aras MSL | 1 | MSL1 (per JEDEC J-STD-020) |
| Part Number | — | IPD60N10S412ATMA1 |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, TC=25C) | — | 60 A |
| Power Dissipation (PD, TC=25C) | — | 94 W |
| RDS(on) Max @ VGS=10V | — | 12.2 mOhm |
| Suhu Hubungan Operasi | — | -55 C to +175 C |
| Kiraan Pin | — | 3 (2 + Tab) |
| Peak Reflow Temperature | — | 260 C |
| AEC-Q101 Qualification | — | Qualified (Automotive Grade) |
| Avalanche Tested | — | 100% Avalanche Tested |
| Boson Bebas | — | Yes (per Infineon definition) |