IPD65R380E6ATMA1 vs IPD60N10S412ATMA1 Perbandingan
Perbandingan bersamaan detil IPD65R380E6ATMA1 dari Infineon dan IPD60N10S412ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD65R380E6ATMA1 | IPD60N10S412ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ E6 | — |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET, Enhancement Mode |
| Technology | Superjunction (CoolMOS™) | — |
| Drain-Source Voltage (V_DS) | 650 V | — |
| Continuous Drain Current (I_D) at T_C | 10.6 A | — |
| R_DS(on) max at V_GS=10V | 380 mΩ | — |
| R_DS(on) test conditions | 3.2 A, 10 V | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Gate Threshold Voltage (V_GS(th)) | 3.5 V typ | — |
| Gate Charge (Q_G) | 39 nC at 10 V | — |
| Input Capacitance (C_iss) | 710 pF at 100 V | — |
| Power Dissipation (P_D) at T_C | 83 W | — |
| Rentang Suhu Kerja | -55 °C to +150 °C | — |
| Paket | PG-TO252-3 (DPAK), surface mount | PG-TO252-3-313 (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant (Green Product) |
| Level MSL | 1 | MSL1 (per JEDEC J-STD-020) |
| Part Number | — | IPD60N10S412ATMA1 |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, TC=25C) | — | 60 A |
| Power Dissipation (PD, TC=25C) | — | 94 W |
| RDS(on) Max @ VGS=10V | — | 12.2 mOhm |
| Suhu Hubung Kerja | — | -55 C to +175 C |
| Jumlah Pin | — | 3 (2 + Tab) |
| Peak Reflow Temperature | — | 260 C |
| AEC-Q101 Qualification | — | Qualified (Automotive Grade) |
| Avalanche Tested | — | 100% Avalanche Tested |
| Bebas Halogen | — | Yes (per Infineon definition) |