IPD78CN10NGATMA1 - 100V 13A OptiMOS N-Ch MOSFET | Infineon
MPN: IPD78CN10NGATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.92 | $920.00 |
| 2,500 | $0.78 | $1,950.00 |
Drop-in alternatives for IPD78CN10NGATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IPD78CN10N G
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IPD78CN10NGBUMA1
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IPB79CN10N G
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IPI80CN10N G
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BSC098N10NS5ATMA1
β Drop-Inβ In Stock
$0.55 / Unit
View Datasheet βIPD78CN10NGATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 2 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | 100 V |
| Continuous Drain Current (ID) at Tc=25C | 13 A |
| On-Resistance RDS(on) Max at VGS=10V | 78 mOhm |
| Power Dissipation (PD) Max at Tc=25C | 31 W |
| Operating Junction Temperature Max | 175 C |
| Package / Case | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) + Tab |
| Lead Plating | Pb-free (Matte Tin) |
| RoHS Compliance | Compliant |
| JEDEC Qualification | Qualified per JEDEC1 for target application |
| Technology | OptiMOS 2 Power-Transistor |
| MSL Level | 1 (per JEDEC J-STD-020) |
IPD78CN10NGATMA1 Pin Configuration
| Pin 1 | Gate (G) β Gate control input - drive to 10V for full RDS(on) |
| Pin 2 | Drain (D) β Drain terminal (internally bonded to rear tab) |
| Pin 3 | Source (S) β Source terminal - power return path |
| Pin Tab | Drain (D) β Rear metal tab is electrically bonded to pin 2 (Drain) and serves as the primary thermal pad |
Safe Operating Area - IPD78CN10NGATMA1
Typical Applications
IPD78CN10NGATMA1 is suitable for 7 applications: 48V Telecom Synchronous Rectifier, Hot-Swap / E-Fuse Controller Switch, BLDC Motor Drive Low-Side Switch, Industrial 48V DC-DC Buck Converter, Server / Datacenter 48V Bus OR-ing, Automotive 12V/24V Load Switch, Power Over Ethernet (PoE) High-Side Switch.
48V Telecom Synchronous Rectifier
The IPD78CN10NGATMA1's 100 V VDS and 78 mOhm RDS(on) at 10 V VGS are well matched to 48 V nominal telecom bus synchronous-rectifier stages, where transient bus excursions to 60 V must be tolerated without breakdown. Placed on the secondary low-side of an isolated forward or half-bridge converter, the MOSFET's low Qg x RDS(on) figure of merit keeps switching loss under 1 W at 200 kHz / 5 A, while conduction loss at full load (78 mOhm x 5 A^2 = ~2 W) fits comfortably in the DPAK 31 W power budget with a 1 sq-inch copper pour. Compared with the previous-generation Infineon part, this OptiMOS 2 device delivers ~30% lower RDS(on) and FOM per the Infineon datasheet, increasing overall converter efficiency by 1-2 percentage points.
Recommended
Hot-Swap / E-Fuse Controller Switch
The IPD78CN10NGATMA1 functions as the main pass element in a 48 V hot-swap or electronic-fuse circuit, where its 100 V VDS provides 50% headroom above the nominal 48 V rail, and its 78 mOhm RDS(on) keeps full-load conduction loss under 1 W at 3.5 A continuous. The 13 A pulsed-current capability covers inrush transients during board insertion, and the 175 C maximum junction temperature allows sustained fault-current handling during breaker-trip events. Designers typically place a TVS clamp across drain-source for avalanche protection and add a gate-source resistor of 10-100 kOhm to keep the device off during controller power-up.
Recommended
BLDC Motor Drive Low-Side Switch
In a 24-48 V BLDC motor drive, the IPD78CN10NGATMA1 serves as the low-side switch of a three-phase half-bridge, switching PWM frequencies from 20-50 kHz at 5-10 A continuous phase current. Its 78 mOhm RDS(on) keeps conduction loss under 5 W per switch at full load (fits DPAK 31 W dissipation budget), while OptiMOS 2's fast body-diode reverse recovery supports synchronous rectification and reduces dead-time loss. The 100 V VDS rating allows the bus to ride through regenerative braking transients without avalanche breakdown. Companion gate drivers such as the IR2114 or 6ED003L02F2 handle level shifting and dead-time insertion.
Recommended
Industrial 48V DC-DC Buck Converter
The IPD78CN10NGATMA1 is suitable for the high-side or low-side switch of an industrial 48 V-to-low-voltage buck converter delivering 3.3 V, 5 V, or 12 V rails at 5-10 A. With a 100 V VDS rating, the part tolerates 48 V nominal plus transients up to 60 V, while the 78 mOhm RDS(on) delivers >95% efficiency at moderate loads. The DPAK package allows compact SMD manufacturing with standard reflow profiles. Designers pair the MOSFET with a peak-current-mode controller (such as Infineon XDPS2201 or TlE buck controllers) to leverage the OptiMOS 2 fast switching edge rates for high loop bandwidth and tight output regulation.
Recommended
Server / Datacenter 48V Bus OR-ing
In redundant 48 V server power architectures, the IPD78CN10NGATMA1 can be used as a discrete OR-ing FET to combine two independent 48 V feeds with low forward drop and fast disconnect during fault events. Its 78 mOhm RDS(on) at 10 V VGS limits forward voltage drop to 0.39 V at 5 A - significantly lower than Schottky diode drops, saving 1-2 W per feed. The 100 V VDS handles the maximum 60 V transients on 48 V distribution buses, and the fast body-diode enables hot-swap transition without catastrophic ring-up. Designers should add a gate-source Zener clamp to prevent VGS overstress during transient events.
Recommended
Automotive 12V/24V Load Switch
Although the IPD78CN10NGATMA1 is not AEC-Q100 qualified, it remains a popular choice for non-safety automotive loads (infotainment, interior lighting, USB-PD rails) operating from 12 V or 24 V nominal vehicle buses. The 100 V VDS comfortably tolerates load-dump transients up to 35 V on 12 V systems and 60 V on 24 V trucks. Its 78 mOhm RDS(on) and 13 A rating cover most 12 V accessory loads (5-8 A continuous), and the DPAK footprint simplifies PCB layout for high-volume automotive Tier-1 designs. For AEC-Q100 applications, consider Infineon's automotive-grade OptiMOS 2 alternatives with explicit Q-1 suffix.
Recommended
Power Over Ethernet (PoE) High-Side Switch
The IPD78CN10NGATMA1 functions as the high-side switch in PoE+ (30 W) and PoE++ Type 3 (60 W) powered-device (PD) controllers, switching the 48 V rail under IEEE 802.3at/bt control. Its 100 V VDS handles the 50-57 V PoE bus range, and the 78 mOhm RDS(on) keeps full-load conduction loss under 2 W at 5 A. The 13 A current rating supports PD classification up to Class 6 (60 W) with sufficient thermal derating margin. Designers should add TVS protection across drain-source to clamp inductive transients from cable disconnect events and select a controller with integrated current-sense and MOSFET driver.
Recommended
Recommended Products Summary
Engineering reference data for IPD78CN10NGATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD78CN10N G | IPD78CN10NGBUMA1 | IPB79CN10N G | IPI80CN10N G | IPP80CN10N G | BSC098N10NS5ATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO263-3 (D2PAK) | PG-TO262-3 (I2PAK) | PG-TO220-3 | PG-TDSON-8 (SuperSO8) |
| Drain-Source Voltage VDS Max | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| Continuous Drain Current (Tc=25C) | 13 A | 13 A | 13 A | 13 A | 13 A | 13 A | [DATA_NEEDED: continuous drain current] |
| RDS(on) Max at VGS=10V | 78 mOhm | 78 mOhm | 78 mOhm | 79 mOhm (+1.3%) | 80 mOhm (+2.6%) | 80 mOhm (+2.6%) | 9.8 mOhm (-87%) |
| Power Dissipation (Tc=25C) | 31 W | 31 W | 31 W | 36 W (+16%) | 42 W (+35%) | 44 W (+42%) | [DATA_NEEDED: power dissipation] |
| Technology / Family | OptiMOS 2 | OptiMOS 2 | OptiMOS 2 | OptiMOS 2 | OptiMOS 2 | OptiMOS 2 | OptiMOS 5 |
| RoHS / Pb-free | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Qty-1 Price (USD, approx) | 1.85 | 1.85 | 1.85 | 1.95 | 2.10 | 2.25 | 1.65 |
Key Differentiators
- OptiMOS 2 technology with 30% lower RDS(on) and FOM versus previous generation (vs Previous-generation Infineon 100V MOSFETs)
- Wide 100V VDS rating with 13A continuous drain current in compact DPAK (vs Lower-voltage 60V/80V DPAK MOSFETs)
- Same OptiMOS 2 die scales across DPAK / D2PAK / I2PAK / TO-220 family (vs Discrete 100V MOSFETs from other vendors)
Design Notes
Estimated: at continuous 7 A drain current and 100 V VDS, the IPD78CN10NGATMA1 dissipates roughly I^2 x RDS = 49 x 0.078 = 3.8 W in the worst case (fully on), and much less in switching applications. The DPAK PG-TO252-3 package has a junction-to-ambient thermal resistance (theta_JA) of approximately 50 C/W on a 1 sq-inch 2-oz copper pour, so the junction temperature rise above ambient at 3.8 W is ~190 C - exceeding the 175 C maximum. Designers must either reduce continuous current to 5 A or expand copper area to 2 sq-inch with thermal vias for reliable operation.
Place the gate resistor (typically 10-100 Ohm) as close as possible to the gate pin (pin 1) to suppress parasitic turn-on from drain-gate Miller coupling. The DPAK tab serves as the drain terminal and must be soldered to a continuous copper pour with at least 4 thermal vias (0.3 mm drill, 1 mm pitch) to the opposite PCB layer for thermal dissipation. Keep the high-current drain loop (input cap -> drain tab -> source -> input cap ground) area as small as possible to minimize parasitic inductance and switching ringing.
Drive the gate to at least 10 V VGS to achieve the rated 78 mOhm RDS(on). Driving at 4.5 V (logic-level) typically results in 150-200 mOhm RDS(on) - almost 3x worse conduction loss. For high-frequency switching above 100 kHz, use a dedicated gate-driver IC (such as IRS2302 or 1EDN7511) rather than a logic-level GPIO; the gate driver's 1-2 A peak source/sink current ensures fast Miller plateau transitions and minimizes switching loss in the OptiMOS 2 die.
Do not exceed the 175 C maximum junction temperature - the part will thermally run away with no protection circuit. Add a TVS clamp (such as SMBJ5.0A or higher-voltage equivalent) across drain-source when switching inductive loads (relays, motors, transformers) to absorb avalanche energy. Do not operate the gate-source junction above +/-20 V VGS - static discharge or driver fault conditions can puncture the gate oxide. Always include a 10 kOhm gate-source pull-down resistor to keep the device off during controller power-up.
Compliance Information
Pb-free lead plating per Infineon datasheet. RoHS compliant and JEDEC1 qualified per target-application standard. Not AEC-Q100 qualified - select automotive-grade Q-1 suffix variants for safety-critical automotive designs.
