IPD80R2K4P7ATMA1 vs IPD80R600P7ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD80R2K4P7ATMA1 sa pamamagitan ng Infineon at IPD80R600P7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD80R2K4P7ATMA1 - 800V CoolMOS P7 2.5A N-Channel MOSFET | Infineon
IPD80R2K4P7ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPD80R2K4P7ATMA1 | IPD80R600P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Part Number | IPD80R2K4P7ATMA1 | — |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS P7 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), Superjunction | CoolMOS P7 super-junction |
| Drain-to-Source Voltage (Vdss) | 800 V | — |
| Continuous Drain Current (Id) @ Tc=25C | 2.5 A | — |
| Power Dissipation (Pd) @ Tc=25C | 22 W | — |
| On-Resistance RDS(on) Max @ VGS=10V | 2000 mOhm | — |
| Gate Drive Voltage (typ) | 10 V | — |
| Packhaging | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Pins | 3 (2 + Tab) | — |
| Configuration | Single | — |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction) | -55 C to +150 C |
| Part Status | Active | — |
| Drain-Source Voltage (VDS) | — | 800 V |
| Continuous Drain Current (ID, Tc) | — | 8 A |
| Pulsed Drain Current (IDM) | — | 22 A |
| On-Resistance (RDS(on), max) | — | 600 mΩ at VGS=10V |
| Maximum Power Dissipation (Ptot) | — | 60 W (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 3 V (typical) |
| Maximum Gate-Source Voltage (VGS) | — | ±30 V |
| Avalanche Energy, Single Pulse (EAS) | — | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | — | 0.17 mJ |
| Polarity | — | N-Channel |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |