IPD80R2K4P7ATMA1 - 800V CoolMOS P7 2.5A N-Channel MOSFET | Infineon
MPN: IPD80R2K4P7ATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $1.05 | $1,050.00 |
IPD80R2K4P7ATMA1 Overview
A superjunction MOSFET (also called CoolMOS) is a high-voltage power MOSFET that uses alternating P/N epitaxial layers to break the classic silicon limit of R_DS(on) x area for a given breakdown voltage. In the broader taxonomy, this places the IPD80R2K4P7ATMA1 within the discrete semiconductor > MOSFETs > high-voltage superjunction MOSFETs > power-switching transistors family. The CoolMOS P7 generation specifically targets low-to-medium power SMPS applications where designers need 800V avalanche ruggedness without sacrificing ease of use.
Key features include a 10V gate-drive optimization for standard MOSFET gate drivers, integrated gate-protection Zener diodes, low gate charge for fast switching transitions, and a dv/dt ruggedness that allows operation directly from rectified 230V/400V AC mains. The P7 series combines best-in-class figure-of-merit with state-of-the-art ease-of-use, leveraging Infineon's 18+ years of superjunction technology innovation.
The internal architecture uses a deep-trench superjunction cell design that reduces conduction and switching losses simultaneously, achieving a figure-of-merit (FOM = RDS(on) x QG) that is competitive with the latest industry offerings. Compared to the previous CoolMOS P6 series, the P7 typically offers lower QG at the same RDS(on), making it well-suited to high-frequency quasi-resonant flyback and LLC topologies.
Typical applications include low-power SMPS adapters, auxiliary power supplies for white goods and industrial equipment, LED lighting drivers, e-bike and power tool chargers, and standby/auxiliary rails in major appliances. Its 800V breakdown rating provides ample margin for 230V AC rectified bus operation.
When designing with this device, ensure the gate-drive voltage reaches the fully-enhanced region (10V typical) and that snubber circuits are tuned to control drain-voltage overshoot below the 800V rating. Thermal design should target a junction temperature below 125C under worst-case continuous load.
Drop-in alternatives for IPD80R2K4P7ATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPD80R2K4P7ATMA1 (same form factor and footprint) β differing in Technology, Package, Gate Threshold Voltage (VGS(th)), Operating Temperature Range.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
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IPI80R2K4P7ATMA1
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STF10N80K5
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IPD80R2K4P7ATMA1 Maximum Ratings & Electrical Characteristics
| Part Number | IPD80R2K4P7ATMA1 |
| Manufacturer | Infineon Technologies |
| Series | CoolMOS P7 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide), Superjunction |
| Drain-to-Source Voltage (Vdss) | 800 V |
| Continuous Drain Current (Id) @ Tc=25C | 2.5 A |
| Power Dissipation (Pd) @ Tc=25C | 22 W |
| On-Resistance RDS(on) Max @ VGS=10V | 2000 mOhm |
| Gate Drive Voltage (typ) | 10 V |
| Package | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount |
| Pins | 3 (2 + Tab) |
| Configuration | Single |
| Operating Temperature Range | -55C to +150C (junction) |
| Part Status | Active |
IPD80R2K4P7ATMA1 Pin Configuration
| Pin 1 | Gate β MOSFET gate input, driven by 10V gate-source voltage for full enhancement |
| Pin 2 | Drain β MOSFET drain, internally connected to the metal tab; high-voltage switching node |
| Pin 3 | Source β MOSFET source, return path for gate-drive and primary-side current sensing |
Safe Operating Area (DC, Tcase = 25C)
Typical Applications
IPD80R2K4P7ATMA1 is suitable for 6 applications: Low-Power SMPS Adapters, LED Lighting Drivers, White Goods Auxiliary Power, Industrial Auxiliary Power Supplies, Power Tool Chargers and E-Bike Chargers, Standby Power for Server/Networking.
Low-Power SMPS Adapters
The IPD80R2K4P7ATMA1 is ideal for sub-25W flyback SMPS adapters where its 800V Vdss comfortably exceeds the peak rectified mains voltage of 325V (from 230V AC), and the 2000 mOhm RDS(on) balances conduction loss with switching speed. Placed on the primary side of the flyback converter directly after the bridge rectifier, it handles 2.5A continuous drain current and 22W dissipation in the DPAK package while delivering high efficiency at quasi-resonant or fixed-frequency operation. The integrated gate-protection Zener diodes simplify the gate-drive network and improve dv/dt ruggedness, enabling compact charger designs for phones, tablets, and small consumer electronics.
Recommended
LED Lighting Drivers
The IPD80R2K4P7ATMA1 fits isolated and non-isolated LED driver designs operating from universal mains input (85-277V AC). Its 800V breakdown rating provides ample margin for PFC-output voltage (~400V DC) and resonant ringing peaks, while the 2.5A current capability drives LED strings up to 15-20W. The DPAK surface-mount package enables slim form-factor T8/T5 LED tubes and downlight drivers where PCB copper area serves as the heatsink. Compared to planar 800V MOSFETs, the CoolMOS P7 superjunction technology reduces RDS(on) x QG figure-of-merit by 30-50%, improving both efficiency and thermal performance in dimmable and non-dimmable fixtures.
Recommended
White Goods Auxiliary Power
In washing machines, refrigerators, ovens, and dishwashers, the IPD80R2K4P7ATMA1 powers the low-wattage auxiliary rail (typically 5-15W standby or display power). Its 800V rating handles universal mains input without requiring extensive transient protection, and the DPAK package dissipates the 1-3W typical losses through standard PCB copper pours. The 150C junction temperature rating supports operation in enclosed appliance environments where ambient temperatures inside the cabinet can exceed 60C during heavy main-cycle operation.
Recommended
Industrial Auxiliary Power Supplies
The IPD80R2K4P7ATMA1 supports industrial 24V/48V auxiliary supplies derived from 230/400V AC mains, powering sensors, PLCs, and HMI displays. Its superjunction architecture achieves better than 85% efficiency at full load in a 10W flyback design, reducing heat-sink requirements. The 800V avalanche rating handles wide industrial mains variations and inductive switching transients in motor-control cabinets. DPAK packaging supports through-hole-mount-equivalent reflow assembly for automated production lines while delivering industrial-grade reliability.
Recommended
Power Tool Chargers and E-Bike Chargers
The IPD80R2K4P7ATMA1 serves as the primary switch in 20-30W Li-ion battery chargers for power tools and e-bikes, where its 800V Vdss handles rectified 120V/230V AC input and the 2.5A drain current supports 1-2A charging currents with appropriate transformer turns ratio. The DPAK surface-mount package is well-suited to compact charger enclosures and supports PCB-area thermal dissipation. The CoolMOS P7 low gate charge reduces driver losses at the higher switching frequencies (65-130 kHz) used to shrink magnetic components.
Recommended
Standby Power for Server/Networking
In server and networking equipment auxiliary power designs (typically 5-15W standby rails), the IPD80R2K4P7ATMA1 provides reliable cold-start and steady-state operation. Its 800V rating handles 277V AC commercial building power and -48V DC telecom backup systems through DC-DC conversion stages. The CoolMOS P7 dv/dt ruggedness reduces snubber circuit complexity, enabling smaller magnetics and higher power density for blade-server and 1U switch standby rails.
Recommended
Recommended Products Summary
Engineering reference data for IPD80R2K4P7ATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD80R600P7ATMA1 | IPD80R2K4CE | IPI80R2K4P7ATMA1 | IPD80R1K0P7ATMA1 | STF10N80K5 | NTP8G0P8F |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics | onsemi |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO262-3 (I2PAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Drain-to-Source Voltage (Vdss) | 800 V | 800 V | 800 V | 800 V | 800 V | 800 V | 800 V |
| Technology | CoolMOS P7 (superjunction) | CoolMOS P7 (superjunction) | CoolMOS CE (superjunction) | CoolMOS P7 (superjunction) | CoolMOS P7 (superjunction) | MDmesh K5 (superjunction) | onsemi superjunction |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Through-Hole | Surface Mount | Surface Mount | Surface Mount |
Key Differentiators
- Industry-leading CoolMOS P7 figure-of-merit (RDS(on) x QG) (vs IPD80R2K4CE)
- Drop-in 600 mOhm upgrade available in same package (vs IPD80R600P7ATMA1)
- Cross-brand availability with verified pin compatibility (vs STF10N80K5 / NTP8G0P8F)
Design Notes
The DPAK package dissipates 22W at Tc=25C, but real-world designs rely on PCB copper area for cooling. Estimated: with a 1 sq inch (645 sq mm) copper pour on a 1 oz FR-4 board, theta_JA is approximately 50 C/W, allowing ~2.5W continuous dissipation at 25C ambient (junction rise 125C above ambient). For continuous 2.5A drain current at full 800V bus, forced air cooling or a larger copper area (2+ sq inches) is required. Verify with the Infineon thermal characterization curves in the datasheet.
Keep the high-current loop area (drain-switch-node to transformer primary) as small as possible to minimize ringing and EMI. Place the gate-drive resistor (typically 10-100 ohm) directly adjacent to the gate pin, and use a Kelvin-source connection if the source pad is split between power and signal grounds. The DPAK tab is the drain and must be soldered to a copper pad large enough to handle both electrical and thermal loads.
Avoid driving the gate with insufficient voltage: VGS below 9V causes partial enhancement and high RDS(on), increasing conduction loss dramatically. Do not exceed the 800V Vdss rating during transformer leakage ringing; add an RCD snubber or use a primary-clamp circuit. The integrated gate-protection Zener diodes simplify protection but limit maximum VGS to ~+/-20V; never apply gate voltages above 20V or below -20V.
Use a minimum 2 oz copper on the drain pad for DPAK thermal performance, with thermal vias to inner copper planes. Recommended footprint: 6.5mm x 9.0mm pad with 1.5mm x 3.0mm tab area, per IPC-2221 surface-mount guidelines. For high-voltage clearance, maintain at least 3mm creepage distance between the drain pad and adjacent low-voltage traces or copper pours to meet IEC 60950 / IEC 62368 safety standards.
Compliance Information
Industrial-grade MOSFET; not AEC-Q100 qualified for automotive. RoHS and REACH compliant per Infineon product page. Lead-free and halogen-free reflow soldering compatible.
