IPD90N10S406ATMA1 vs BSC076N04NDATMA1 比較
詳細並排比較 IPD90N10S406ATMA1 由 Infineon 與 BSC076N04NDATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD90N10S406ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD90N10S406ATMA1 | — |
| Family / Series | OptiMOS | — |
| 電晶體類型 | N-Channel MOSFET, Enhancement Mode | — |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 90 A | — |
| Power Dissipation (Pd) @ Tc=25°C | 136 W | — |
| Gate Drive Level | Normal Level (10 V typical Vgs) | — |
| Avalanche Energy Rating (EAS) | 250 mJ | — |
| 工作接面溫度 | -55 °C to +175 °C | -55 C to +175 C |
| Storage Temperature Range | -55 °C to +175 °C | — |
| 封裝 / 外殼 | PG-TO252-3-313 (DPAK) | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 (Gate, Drain, Source) | — |
| MSL 等級 | MSL1 (260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| Built-in Body Diode | Yes (single with built-in diode) | — |
| Avalanche Tested | 100% Avalanche tested | — |
| Packaging | Tape & Reel (Cut Tape / Reel options available) | — |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Technology | — | Trench MOSFET (OptiMOS 3) |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |