IPD90N10S406ATMA1 vs IAUC120N04S6N009ATMA1 Comparison
Detailed side-by-side comparison of IPD90N10S406ATMA1 by Infineon and IAUC120N04S6N009ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N04S6N009ATMA1
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΞ© OptiMOS 6 MOSFET | Infineon
IAUC120N04S6N009ATMA1 β ActiveSpecification Comparison
| Parameter | IPD90N10S406ATMA1 | IAUC120N04S6N009ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.72 | $1.60 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD90N10S406ATMA1 | β |
| Family / Series | OptiMOS | β |
| Transistor Type | N-Channel MOSFET, Enhancement Mode | β |
| Drain-Source Voltage (Vds) | 100 V | β |
| Continuous Drain Current (Id) @ Tc=25Β°C | 90 A | β |
| Power Dissipation (Pd) @ Tc=25Β°C | 136 W | β |
| Gate Drive Level | Normal Level (10 V typical Vgs) | β |
| Avalanche Energy Rating (EAS) | 250 mJ | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55 Β°C to +175 Β°C |
| Storage Temperature Range | -55 Β°C to +175 Β°C | β |
| Package / Case | PG-TO252-3-313 (DPAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 3 (Gate, Drain, Source) | β |
| MSL Level | MSL1 (260 Β°C peak reflow) | 1 |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Compliance | Green Product (RoHS compliant) | β |
| Built-in Body Diode | Yes (single with built-in diode) | β |
| Avalanche Tested | 100% Avalanche tested | β |
| Packaging | Tape & Reel (Cut Tape / Reel options available) | β |
| Part Family | β | OptiMOS 6 40V |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (V_DSS) | β | 40 V |
| Continuous Drain Current (I_D, Tc) | β | 120 A |
| Pulsed Drain Current | β | [DATA_NEEDED: pulsed I_D value] |
| R_DS(on) max @ V_GS=10V | β | 0.9 mΞ© |
| Gate Threshold Voltage V_GS(th) typ | β | [DATA_NEEDED: V_GS(th) typical value] |
| Total Gate Charge Q_g typ | β | [DATA_NEEDED: Q_g typical] |
| Power Dissipation (Tc) | β | 150 W |
| Thermal Resistance R_thJC max | β | 1.0 K/W |
| Package | β | PG-TDSON-8-33 (5x6 mm) |
| RoHS | β | Compliant |
| Lead-Free / Halogen-Free | β | Yes (per Infineon product page) |